发光学报, 2011, 32 (3): 266, 网络出版: 2011-03-31
极化效应对InGaN/GaN多量子阱结构光电特性的影响
Influence of Polarization Effect on Optoelectronic Properties of InGaN/GaN Multiple Quantum Well
引用该论文
路慧敏, 陈根祥. 极化效应对InGaN/GaN多量子阱结构光电特性的影响[J]. 发光学报, 2011, 32(3): 266.
LU Hui-min, CHEN Gen-xiang. Influence of Polarization Effect on Optoelectronic Properties of InGaN/GaN Multiple Quantum Well[J]. Chinese Journal of Luminescence, 2011, 32(3): 266.
路慧敏, 陈根祥. 极化效应对InGaN/GaN多量子阱结构光电特性的影响[J]. 发光学报, 2011, 32(3): 266. LU Hui-min, CHEN Gen-xiang. Influence of Polarization Effect on Optoelectronic Properties of InGaN/GaN Multiple Quantum Well[J]. Chinese Journal of Luminescence, 2011, 32(3): 266.