极化效应对InGaN/GaN多量子阱结构光电特性的影响
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路慧敏, 陈根祥. 极化效应对InGaN/GaN多量子阱结构光电特性的影响[J]. 发光学报, 2011, 32(3): 266. LU Hui-min, CHEN Gen-xiang. Influence of Polarization Effect on Optoelectronic Properties of InGaN/GaN Multiple Quantum Well[J]. Chinese Journal of Luminescence, 2011, 32(3): 266.
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