半导体光电, 2015, 36 (6): 901, 网络出版: 2016-01-22   

短波红外In0.53Ga0.47As探测器的实时γ辐照研究

Study on Real-time γ Irradiation Effect on Short Wavelength Infrared In0.53Ga0.47As Detectors
黄星 1,2,3,*李雪 1,2李淘 1,2唐恒敬 1,2邵秀梅 1,2龚海梅 1,2
作者单位
1 中国科学院上海技术物理研究所 1.传感技术国家重点实验室
2 2. 红外成像材料与器件重点实验室,上海 200083
3 3. 中国科学院大学,北京 100039
引用该论文

黄星, 李雪, 李淘, 唐恒敬, 邵秀梅, 龚海梅. 短波红外In0.53Ga0.47As探测器的实时γ辐照研究[J]. 半导体光电, 2015, 36(6): 901.

HUANG Xing, LI Xue, LI Tao, TANG Hengjing, SHAO Xiumei, GONG Haimei. Study on Real-time γ Irradiation Effect on Short Wavelength Infrared In0.53Ga0.47As Detectors[J]. Semiconductor Optoelectronics, 2015, 36(6): 901.

参考文献

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[3] 龚海梅,刘大福. 航天红外探测器的发展现状进展\[J\]. 红外与激光工程,2008,37(1):18-24.

    Gong Haimei,Liu Dafu. Development and trends in spaceborne infrared detector\[J\]. Infrared and Laser Engineering, 2008,37(1):18-24.

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[5] Barde S,Ecoffet R, Costeraste J, et al. Displacement damage effects in InGaAs detectors: experimental results and semi-empirical model prediction\[J\]. IEEE Trans. on Nuclear Science, 2000, 47(6): 2466-2472

[6] Kleipool Q L,Jongma R T, Gloudemans A M S, et al. In-flight proton-induced radiation damage to SCIMACHY’s extended-wavelength InGaAs near-infrared detectors\[J\]. Infrared Phys. Technol., 2007, 50:30-37.

[7] 克拉艾,西蒙恩. 先进半导体材料及器件的辐照效应\[M\]. 刘忠立,译. 北京:国防工业出版社,2008:330-336.

    Crat, Simon. The Irradiation Effect of Advanced Semiconductor Materials and Devices\[M\].Liu Zhongli, Translation. Beijing: National Defence Industry Press,2008:330-336.

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黄星, 李雪, 李淘, 唐恒敬, 邵秀梅, 龚海梅. 短波红外In0.53Ga0.47As探测器的实时γ辐照研究[J]. 半导体光电, 2015, 36(6): 901. HUANG Xing, LI Xue, LI Tao, TANG Hengjing, SHAO Xiumei, GONG Haimei. Study on Real-time γ Irradiation Effect on Short Wavelength Infrared In0.53Ga0.47As Detectors[J]. Semiconductor Optoelectronics, 2015, 36(6): 901.

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