短波红外In0.53Ga0.47As探测器的实时γ辐照研究
[1] Porod W,Ferry D K. Modification of the virtual-crystal approximation for ternary Ⅲ-Ⅴ compounds\[J\]. Phys. Rev. B, 1983, 27(4):2587-2589.
[2] Yoon H W,Dopkiss M C, Eppeldauer G P. Performance comparisons of InGaAs extended InGaAs and short-wave HgCdTe detectors between 1μm and 2.5μm\[J\]. Proc. SPIE, 2006, 6297:1-10.
[3] 龚海梅，刘大福. 航天红外探测器的发展现状进展\[J\]. 红外与激光工程，2008，37(1):18-24.
[4] Bourdarie S,Xapsos M. The near-earth space radiation environment\[J\]. IEEE Trans. on Nuclear Science, 2008, 55(4):1810-1832.
[5] Barde S,Ecoffet R, Costeraste J, et al. Displacement damage effects in InGaAs detectors: experimental results and semi-empirical model prediction\[J\]. IEEE Trans. on Nuclear Science, 2000, 47(6): 2466-2472
[6] Kleipool Q L,Jongma R T, Gloudemans A M S, et al. In-flight proton-induced radiation damage to SCIMACHY’s extended-wavelength InGaAs near-infrared detectors\[J\]. Infrared Phys. Technol., 2007, 50:30-37.
[7] 克拉艾，西蒙恩. 先进半导体材料及器件的辐照效应\[M\]. 刘忠立，译. 北京：国防工业出版社，2008:330-336.
Crat, Simon. The Irradiation Effect of Advanced Semiconductor Materials and Devices\[M\].Liu Zhongli, Translation. Beijing: National Defence Industry Press，2008:330-336.
[8] 庄奕琪.微电子器件应用可靠性技术\[M\]. 北京：电子工业出版社，1996:113-116.
Zhuang Yiqi. Application of Microelectronic Device Reliability Technology\[M\]. Beijing: Publishing House of Electron. Industry，1996:113-116.
黄星, 李雪, 李淘, 唐恒敬, 邵秀梅, 龚海梅. 短波红外In0.53Ga0.47As探测器的实时γ辐照研究[J]. 半导体光电, 2015, 36(6): 901. HUANG Xing, LI Xue, LI Tao, TANG Hengjing, SHAO Xiumei, GONG Haimei. Study on Real-time γ Irradiation Effect on Short Wavelength Infrared In0.53Ga0.47As Detectors[J]. Semiconductor Optoelectronics, 2015, 36(6): 901.
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