电泵浦垂直外腔面发射激光器振荡特性的理论分析及实验研究

张星; 宁永强; 张建伟; 张建; 秦莉; 刘云; 佟存柱; 王立军

doi:doi:10.3724/sp.j.1010.2013.00344

红外与毫米波学报, 2013, 32 (4): 344, 网络出版: 2013-08-28

电泵浦垂直外腔面发射激光器振荡特性的理论分析及实验研究

Oscillation characteristics of electrically-pumped vertical external cavity surface emitting lasers

论文大纲

张星 ^1,*宁永强 ¹张建伟 ^1,2张建 ^1,2秦莉 ¹刘云 ¹佟存柱 ¹王立军 ¹

作者单位

¹ 中国科学院长春光学精密机械与物理研究所发光学及应用国家重点实验室,长春市130033

² 中国科学院大学，北京市100049

摘要

对具有InGaAs/GaAsP量子阱周期增益结构有源区的980 nm电泵浦垂直外腔面发射激光器(EP-VECSEL)的振荡特性进行了理论分析及实验研究.模拟并分析了耦合腔条件下EP-VECSEL的振荡特性与其分布布拉格反射镜(DBR)及外腔镜反射率之间的关系，并根据理论分析结果对器件结构进行了优化设计.在实验上制备出具有不同外腔镜反射率的EP-VECSEL器件，并对其连续波(CW)振荡特性进行了研究.实验结果表明，有源区直径为300 μm的EP-VECSEL器件在外腔镜反射率为90 %时阈值电流为1.2 A，注入电流为4 A时连续激光输出功率为270 mW; 在外腔镜反射率为95%时阈值电流为0.9 A，4 A下输出激光功率为150 mW.实验结果与理论分析结论符合较好，说明本文采用的理论分析方法能有效模拟及优化EP-VECSEL器件的振荡特性.

Abstract

The oscillation characteristics of 980 nm electrically-pumped vertical-external-cavity surface-emitting laser (EP-VECSEL) with periodic gain structure active region of InGaAs/GaAsP quantum well was analyzed theoretically and experimentally. The relationship between the DBR & external cavity mirror reflectivity and the oscillating characteristic characteristics of the EP-VECSEL with coupled cavity was simulated. Furthermore, based on the results of simulation, the device structure was optimized. EP-VECSEL devices with different external cavity reflectivity were fabricated and the continuous-wave (CW) oscillation output characteristics were studied. The results of experiment indicated that the threshold current of the 300 μm-device with 90% external mirror reflectivity was 1.2 A and its output power was 270 mW while under injected current of 4A; the output power of the 300 μm-device with 95% external mirror reflectivity was 150 mW at 4 A of injected current and the threshold current was 0.9 A. The experimental results were in good agreement with theoretical analysis, indicating that the model using in this article is suitable for the optimization of EP-VECSEL’s oscillation characteristics.The oscillation characteristics of 980 nm electrically-pumped vertical-external-cavity surface-emitting laser (EP-VECSEL) with periodic gain structure active region of InGaAs/GaAsP quantum well was analyzed theoretically and experimentally. The relationship between the DBR & external cavity mirror reflectivity and the oscillating characteristic characteristics of the EP-VECSEL with coupled cavity was simulated. Furthermore, based on the results of simulation, the device structure was optimized. EP-VECSEL devices with different external cavity reflectivity were fabricated and the continuous-wave (CW) oscillation output characteristics were studied. The results of experiment indicated that the threshold current of the 300 μm-device with 90% external mirror reflectivity was 1.2 A and its output power was 270 mW while under injected current of 4A; the output power of the 300 μm-device with 95% external mirror reflectivity was 150 mW at 4 A of injected current and the threshold current was 0.9 A. The experimental results were in good agreement with theoretical analysis, indicating that the model using in this article is suitable for the optimization of EP-VECSEL's oscillation characteristics.

参考文献

[1] Kuzetsov M, Hakimi F, Sprague R, et al. Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams ［J］. IEEE J. Sel. Top. Quantum Electron, 1999, 5(3): 561-573.

[2] Tropper A C, Hoogland S. Extended cavity surface-emitting semiconductor lasers ［J］. Prog. Quantum Electron, 2006. 30(1): 1-43.

[3] KKuzetsov M. VECSEL Semiconductor Lasers: A Path to High-Power, Quality Beam and UV to IR Wavelength by Design, in Semiconductor Disk Lasers［M］. Weinheim: Wiley-VCH Verlag GmbH & Co. KGaA, 2012: 1-71.

[4] Leinonen T, Korpijarvi V M, Harkonen A, et al. Recent advances in the development of yellow-orange GaInNAs-based semiconductor disk lasers ［J］. Proc. SPIE, 2012, 8242(824208): 1-7.

[5] Rautiannen J, Butkus M, Krestnikov I, et al. High-power quantum dot semiconductor disk lasers［J］. Proc. SPIE, 2012, 8242(824207): 1-10.

[6] Rudin B, Rutz A, Hoffmann M, et al. Highly efficient optically pumped vertical-emitting semiconductor laser with more than 20 W average output power in a fundamental transverse mode［J］. Opt. Lett., 2008, 33(22): 2719-2721.

[7] Beyertt S S, Brauch U, Demaria F, et al. Efficient Gallium-Arsenide Disk Laser［J］. IEEE J. Quantum Electron., 2007, 43(10): 869-875.

[8] Demaria F, Lorch S, Menzel S, et al. Design of highly efficient high-power optically pumped semiconductor disk lasers［J］. IEEE J. Sel. Top. Quantum Electron., 2009. 15(3): 973-977.

[9] Dyball H. The power of VECSELs［J］. Electron. Lett., 2012, 48(9): 467-467.

[10] Mcinerney J G, Mooradian A, Lewis A, et al. High-power surface emitting semiconductor laser with extended vertical compound cavity［J］. Electron. Lett., 2003, 39(6): 523-525.

[11] Rafailov E U, Sibbett W, Mooradian A, et al. Efficient frequency doubling of a vertical-extended-cavity surface-emitting laser diode by use of a periodically poled KTP crystal［J］. Opt. Lett., 2003, 28(21): 2091-2093.

[12] Kurdi M E, Bouchoule S, Bousseksou A, et al. Room-temperature continuous-wave laser operation of electrically-pumped 1.55 um VECSEL［J］. Electron. Lett., 2004, 40(11).

[13] Harkonen A, Bachmann A, Shamsul A, et al. 2.34-μm electrically pumped VECSEL with buried tunnel junction［J］. Proc. SPIE, 2010, 7720(772015): 1-7.

[14] Barbarin Y, Hoffmann M, Pallmann W P, et al. Electrically pumped vertical external cavity surface emitting lasers suitable for passive modelocking［J］. IEEE J. Sel. Top. Quantum Electron., 2011. 17(6): 1779-1786.

[15] Guo B M, Wang Q, Xu B, et al. High-power low-noise VCSEL seed laser for fiber laser applications［J］. Proc. SPIE, 2010, 7615(76150H): 1-8.

[16] Orchard J R, Childs D T, Lin L C, et al. Tradeoffs in the realization of electrically pumped vertical external cavity surface emitting lasers［J］. IEEE J. Sel. Top. Quantum Electron., 2011, 17(6): 1745-1752.

[17] Kreuter P, Witzigmann B, Mass D J H C, et al. On the design of electrically pumped vertical-external-cavity surface-emitting lasers［J］. App. Phy. B, 2008, 91(2): 257-264.

[18] LI Hui-Qing, ZHANG Jie, CUI Da-Fu, et al. Optimal designs for high-power vertical cavity emitting laser［J］. ACTA Phy. Sin.,(李惠青，张杰，崔大复，等. 高功率垂直腔面发射半导体激光器优化设计研究. 物理学报), 2004, 53(9): 2986-2990.

[19] Yu S F. Analysis and design of vertical cavity surface emitting lasers［M］. New York: Wiley, 2003.

[20] Coldren L A, Corzine S W. Diode lasers and photonic integrated circuits［M］. New York: Wiley, 1995.

[21] Tkach R., Chraplyvy A. Regimes of feedback effects in 1.5um distributed feedback lasers［J］. IEEE J. Light. Tech., 1986, 4(11): 1655-1661.

[22] Zhang X, Ning Y Q, Zeng Y G, et al. 980-nm high-power low-divergence VCSELs achieved by optimization of current density distribution［J］. IEEE J. Quant. Electron., 2012, 48(1): 42-48.

张星, 宁永强, 张建伟, 张建, 秦莉, 刘云, 佟存柱, 王立军. 电泵浦垂直外腔面发射激光器振荡特性的理论分析及实验研究[J]. 红外与毫米波学报, 2013, 32(4): 344. ZHANG Xing, NING Yong-Qiang, ZHANG Jian-Wei, ZHANG Jian, QIN Li, LIU Yun, TONG Cun-Zhu, WANG Li-Jun. Oscillation characteristics of electrically-pumped vertical external cavity surface emitting lasers[J]. Journal of Infrared and Millimeter Waves, 2013, 32(4): 344.

电泵浦垂直外腔面发射激光器振荡特性的理论分析及实验研究

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