基于激光诱导击穿光谱技术的铜铟镓硒薄膜中元素含量比的快速定量分析方法

刘世明; 修俊山; 刘云燕

doi:doi:10.3788/CJL201946.0911001

中国激光, 2019, 46 (9): 0911001, 网络出版: 2019-09-10

基于激光诱导击穿光谱技术的铜铟镓硒薄膜中元素含量比的快速定量分析方法下载： 851次

Rapid Quantitative Analysis of Element Content Ratios in Cu(In,Ga)Se₂ Thin Films Using Laser-Induced Breakdown Spectroscopy

刘世明修俊山 ^*刘云燕

作者单位

山东理工大学物理与光电工程学院, 山东淄博 255049

引用该论文

刘世明, 修俊山, 刘云燕. 基于激光诱导击穿光谱技术的铜铟镓硒薄膜中元素含量比的快速定量分析方法[J]. 中国激光, 2019, 46(9): 0911001.

Liu Shiming, Xiu Junshan, Liu Yunyan. Rapid Quantitative Analysis of Element Content Ratios in Cu(In,Ga)Se₂ Thin Films Using Laser-Induced Breakdown Spectroscopy[J]. Chinese Journal of Lasers, 2019, 46(9): 0911001.

参考文献

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刘世明, 修俊山, 刘云燕. 基于激光诱导击穿光谱技术的铜铟镓硒薄膜中元素含量比的快速定量分析方法[J]. 中国激光, 2019, 46(9): 0911001. Liu Shiming, Xiu Junshan, Liu Yunyan. Rapid Quantitative Analysis of Element Content Ratios in Cu(In,Ga)Se₂ Thin Films Using Laser-Induced Breakdown Spectroscopy[J]. Chinese Journal of Lasers, 2019, 46(9): 0911001.

基于激光诱导击穿光谱技术的铜铟镓硒薄膜中元素含量比的快速定量分析方法下载： 851次

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