[1] 周脉鱼, 周蕾, 郑南, 等. p-i-n 结构GaN 光电探测器性能的研究[J]. 中国激光, 2011, 38(1): 0117001.

    Zhou Maiyu, Zhou Lei, Zheng Nan, et al.. Investigation on properties of p-i-n structrued GaN photodetectors[J]. Chinese J Lasers, 2011, 38(1): 0117001.

[2] 赵曼, 李健, 王晓娟, 等. 肖特基型氮化镓紫外光电探测器性能[J]. 光学学报, 2009, 29(12): 3409-3412.

    Zhao Man, Li Jian, Wang Xiaojuan, et al.. The properties of GaN Schottky photodetectors[J]. Acta Optica Sinca, 2009, 29(12): 3409-3412.

[3] 廉瑞凯, 李林, 范亚明, 等. 预辅Al 及AlN 缓冲层厚度对GaN/Si (1 1 1) 材料特性的影响[J]. 中国激光, 2013, 40(1): 0106001.

    Lian Ruikai, Li Lin, Fan Yaming, et al.. Effects of AlN buffer layer thickness and Al pre-treatment on properties of GaN/si(111) epilayer[J]. Chinese J Lasers, 2013, 40(1): 0106001.

[4] 唐建军, 梁庭, 熊继军, 等. 异质外延Si/GaN 应力状态的拉曼光谱测试分析[J]. 激光与光电子学进展, 2010, 47(8): 083002.

    Tang Jianjun, Liang Ting, Xiong Jijun, et al.. Analysis of stress testing using raman spectra on heteroepitaxy Si/GaN[J]. Laser & Optoelectronics Progress, 2010, 47(8): 083002.

[5] J C Carrano, D J H Lambert, C J Eiting, et al.. GaN avalanche photodiodes[J]. Appl Phys Lett, 2000, 76(7): 924-926.

[6] J B Limb, D Yoo, J H Ryou, et al.. GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition[J]. Appl Phys Lett, 2006, 89(1): 011112.

[7] J L Pau, R McClintock, K Minder, et al.. Geiger-mode operation of back-illuminated GaN avalanche photodiodes[J]. Appl Phys Lett, 2007, 91(4): 041104.

[8] L Sun, J L Chen, J F Li, et al.. AlGaN solar-blind avalanche photodiodes with high multiplication gain[J]. Appl Phys Lett, 2010, 97(19): 191103.

[9] C Bayram, J L Pau, R McClintock, et al.. High quantum efficiency back-illuminated GaN avalanche photodiodes[J]. Appl Phys Lett, 2008, 93(21): 211107.

[10] T M Al tahtamouni, A Sedhain, J Y Lin, et al.. Si-doped high Al-content AlGaN epilayers with improved quality and conductivity using indium as a surfactant[J]. Appl Phys Lett, 2008, 92(9): 092105.

[11] 陈翔, 邢艳辉, 韩军, 等. AlN 隔离层对MOCVD 制备的AlGaN/AlN/GaN HEMT 材料电学性质的影响[J]. 中国激光, 2013, 40(6): 0606005.

    Chen Xiang, Xing Yanhui, Han Jun, et al.. Influence of AlN interfacial layer on electrical properties of AlGaN/AlN/GaN HEMT material grown by MOCVD[J]. Chinese J Lasers, 2013, 40(6): 0606005.

[12] K X Dong, D J Chen, H Lu, et al.. Exploitation of polarization in back-illuminated AlGaN avalanche photodiodes [J]. IEEE Photonic Technology Letters, 2013, 25(15): 1510-1513.

[13] Y Huang, D J Chen, H Lu, et al.. Back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes[J]. Appl Phys Lett, 2012, 101(25): 253516.

[14] K X Dong, D J Chen, B Liu, et al.. Characteristics of polarization-doped N-face III-nitride light-emitting diodes[J]. Appl Phys Lett, 2012, 100(7): 073507.

[15] R McClintock, J L Pau, K Minder, et al.. Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes [J]. Appl Phys Lett, 2007, 90 (14): 141112.

[16] A V Sampath, Q G Zhou, R W Enck, et al.. P-type interface charge control layers for enabling GaN/SiC separate absorption and multiplication avalanche photodiodes[J]. Appl Phys Lett, 2012, 101(9): 093506.

[17] Wu Liangliang, Zhao Degang, Deng Yi, et al.. Distribution of electric field and design of devices in GaN avalanche photodiodes[J]. Science China Physics, Mechanics & Astronomy, 2012, 55(4): 619-624.

[18] Xiaodong Wang, Weida Hu, Xiao Shuang, et al.. Dependence of dark current and photoresponse characteristics on polarization charge density for GaN-based avalanche photodiodes[J]. J Phys D: Appl Phys, 2011, 44(40): 405102.

[19] F Xie, H Lu, D J Chen, et al.. Metal–semiconductor–metal ultraviolet avalanche photodiodes fabricated on bulk GaN substrate[J]. IEEE Electron Dev Lett, 2011, 32(9): 1260-1262.

[20] H Jiang, T Egawa. High quality AlGaN solar-blind Schottky photodiodes fabricated on AlN/sapphire template[J]. Appl Phys Lett, 2007, 90(12): 121121.