HgCdTe分子束外延薄膜的应变弛豫
[1] . Fabrication of high-performance large-format MWIR focal plane arrays from MBE-Grown HgCdTe on 4" silicon substrates[J]. Journal of Electronic Materials, 2001, 30: 566-573.
[2] Fewster P F. X-ray scattering from semiconductors[M]. London: Imperial College Press, 2000.
[3] . Shear deformation and strain relaxation in HgCdTe on (211) CdZnTe[J]. Journal of Electronic Materials, 2000, 29: 804-808.
[4] . X-ray double-crystal diffractometry of Ga1-xAlxAs epitaxial layers[J]. Journal of Crystal Growth, 1978, 44: 518-525.
[5] Capper Peter. Properties of narrow gap cadmium based compounds [M]. England : Short Run Press Ltd, 1994, 399-412 & 41-43.
[6] . Critical thickness in the HgCdTe/CdZnTe system[J]. Journal of Electronic Materials, 2000, 29: 676-679.
[7] . Structure of vapor-deposited GaxAl1-xAs crystals[J]. Journal of Applied Physics, 1974, 45: 3789-3794.
方维政, 王元樟, 巫艳, 刘从峰, 魏彦锋, 王庆学, 杨建荣, 何力. HgCdTe分子束外延薄膜的应变弛豫[J]. 红外与毫米波学报, 2004, 23(5): 325. 方维政, 王元樟, 巫艳, 刘从峰, 魏彦锋, 王庆学, 杨建荣, 何力. STRAIN AND RELAXATION OF MBE-HgCdTe FILMS[J]. Journal of Infrared and Millimeter Waves, 2004, 23(5): 325.