[1] E. Chason, B. W. Sheldon, L. B. Freund et al.. Origin of compressive residual stress in polycrystalline thin films［J］. Phys. Rev. Lett., 2002, 88(15): 156103

[2] J. W. Shin, E. Chason. Compressive stress generation in Sn thin films and the role of grain boundary diffusion［J］. Phys. Rev. Lett., 2009, 103(5): 056102

[3] F. Spaepen. Interfaces and stresses in thin films［J］. Acta. Mater., 2000, 48(1): 31～42

[4] R. Koch, D. Hu, A. K. Das. Compressive stress in polycrystalline Volmer-Weber films［J］. Phys. Rev. Lett., 2005, 94(14): 146101

[5] 邵淑英. 薄膜应力的来源机理及控制技术研究［D］. 上海：中科院上海光学精密机械研究所, 2004. 18～21

    Shao Shuying. Study of the Origin Mechanism and Controlling Method of Stress in Thin Films［D］. Shanghai: Shanghai Institute of Optics and Fine Mechanics, 2004. 18～21

[6] S. Y. Shao, J. D. Shao, H. B. He et al.. Stress analysis of ZrO2/SiO2 multilayers deposited on different substrates with different thickness periods［J］. Opt. Lett., 2005, 30(16): 2119～2121

[7] 申雁鸣, 贺洪波, 邵淑英 等. 薄膜厚度对HfO2薄膜残余应力的影响［J］. 稀有金属材料与工程, 2007, 36(3): 412～415

    Shen Yanming, He Hongbo, Shao Shuying et al.. Influence of the film thickness of residual stress of the HfO2 thin films［J］. Rare Metal Materials and Engineering, 2007, 36(3): 412～415

[8] Y. Wang, Y. G. Zhang, W. L. Chen et al.. Optical properties and residual stress of YbF3 thin films deposited at different temperatures［J］. Appl. Opt., 2008, 47(13): 319～323

[9] 肖祁陵, 贺洪波, 邵淑英 等. 沉积温度对氧化钇稳定氧化锆薄膜残余应力的影响［J］. 光学学报, 2008, 28(5): 1007～1011

    Xiao Qiling, He Hongbo, Shao Shuying et al.. Influence of deposition temperature on residual stress of Yttria-stabilized Zirconia thin films［J］. Acta Optica Sinica, 2008, 28(5): 1007～1011

[10] O. Stenzel, S. Wilbrandt, N. Kaiser et al.. The correlation between mechanical stress, thermal shift and refractive index in HfO2, Nb2O5, Ta2O5 and SiO2 layers and its relation to the layer porosity［J］. Thin Solid Films, 2009, 517(21): 6058～6068

[11] O. Stenzel, S. Wilbrandt, S. Yulin et al.. Plasma ion assisted deposition of hafnium dioxide using argon and xenon as process gases［J］. Opt. Mater. Exp., 2011, 1(2): 278～292

[12] C. Friesen, C. V. Thompson. Reversible stress relaxation during precoalescence interruptions of Volmer-Weber thin film growth［J］. Phys. Rev. Lett., 2002, 89(12): 126103

[13] N. Kaiser. Review of the fundamentals of thin-film growth［J］. Appl. Opt., 2002, 41(16): 3053～3059

[14] 方明, 邵淑英, 沈雪峰 等. HfO2薄膜生长应力演化研究［J］. 光学学报, 2009, 29(6): 1734～1739

    Fang Ming, Shao Shuying, Shen Xuefeng et al.. Evolution of growth stress of HfO2 thin film［J］. Acta Optica Sinica, 2009, 29(6): 1734～1739

[15] G. G. Stoney. The tension of metallic films deposited by electrolysis［J］. Proc. R. Soc. London A, 1909, 82(553): 172～175