红外技术, 2017, 39 (8): 700, 网络出版: 2017-10-30  

热电制冷HgCdTe 中波红外探测器的研制

Thermoelectric-Cooled HgCdTe MWIR Detectors
作者单位
昆明物理研究所,云南 昆明 650223
摘要
利用碲镉汞(HgCdTe)体晶材料,采用HgCdTe 材料拼接技术、磨抛技术等成熟的探测器芯片制备工艺以及三级热电制冷技术,设计并研制出了热电制冷型13 元HgCdTe 中波红外光导探测器。在-50℃时,峰值电压响应率可达2.7×104 V/W,峰值探测率达到2.3×1010 cm·Hz1/2·W-1,响应波段在3.0~4.6 μm 之间,峰值响应波长为4.2 μm。
Abstract
By using bulk HgCdTe crystal materials, the detector chip preparation process including HgCdTe material splicing and polishing technology, and three-stage thermoelectric refrigeration technology, a thermoelectric-refrigerator-type 13-pixel HgCdTe photoconductive mid-wavelength infrared detector is designed and manufactured. At a temperature of -50℃, the peak voltage response can reach 2.7×104 V/W, the peak detection reaches 2.3×1010 cm·Hz1/2·W-1, and the response band is in the range of 3.0-4.6 μm with a peak response wavelength of 4.2 μm.
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苏玉辉, 冯江敏, 赵维艳, 龚晓霞, 马启, 邓功荣, 余连杰. 热电制冷HgCdTe 中波红外探测器的研制[J]. 红外技术, 2017, 39(8): 700. SU Yuhui, FENG Jiangmin, ZHAO Weiyan, GONG Xiaoxia, MA Qi, DENG Gongrong, YU Lianjie. Thermoelectric-Cooled HgCdTe MWIR Detectors[J]. Infrared Technology, 2017, 39(8): 700.

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