定量单轴压力下单晶硅片原位拉曼谱峰测试
谢超, 杜建国, 刘雷, 易丽, 刘红, 陈志, 李静. 定量单轴压力下单晶硅片原位拉曼谱峰测试[J]. 光谱学与光谱分析, 2016, 36(4): 1261.
XIE Chao, DU Jian-guo, LIU Lei, YI Li, LIU Hong, CHEN Zhi, LI Jing. In Situ Raman Spectrum Peak Test of Monocrystalline Silicon Wafer under Quantitative Uniaxial Pressure[J]. Spectroscopy and Spectral Analysis, 2016, 36(4): 1261.
[1] Jamieson J C, Lawson A W, Nachtrieb N D. Review of Scientific Instrument, 1959, 30: 1016.
[2] Dunstan D J, Scherrer W. Review of Scientific Instrument, 1988, 59(4): 627.
[3] Bassett W A, Shen A W, Bucknum M, et al. Pure and Applied Geophysics, 1993, 141(2-4): 487.
[4] Silvera I F. Review of Scientific Instrument, 1999, 70(12): 4609.
[5] Evans W J, Yoo C S, Lee G W, et al. Review of Scientific Instrument, 2007, 78(7): 073904.1.
[6] Shinoda K, Noguchi N. Rev. Review of Scientific Instrument, 2008, 79(015101): 1.
[7] Mao H K, Xu J, Bell P M J. Journal of Geophysical Research, 1986, 91(B5): 4673.
[8] Bassett W A, Shen A W, Bucknum M. Review of Scientific Instrument, 1993, 64: 2340.
[9] Christian S, Martin A Z. American Mineralogist, 2000, 85: 1725.
[10] Kaltsas G, Nassiopoulos A G. Microelectronic Engineering, 1997, 35(1-4): 397.
[11] Ingrid D W. Semiconductor Science and Technology, 1996, 11(2): 139.
[12] Ingrid D W. Journal of Raman Spectroscopy, 1999, 30(10): 877.
谢超, 杜建国, 刘雷, 易丽, 刘红, 陈志, 李静. 定量单轴压力下单晶硅片原位拉曼谱峰测试[J]. 光谱学与光谱分析, 2016, 36(4): 1261. XIE Chao, DU Jian-guo, LIU Lei, YI Li, LIU Hong, CHEN Zhi, LI Jing. In Situ Raman Spectrum Peak Test of Monocrystalline Silicon Wafer under Quantitative Uniaxial Pressure[J]. Spectroscopy and Spectral Analysis, 2016, 36(4): 1261.
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