红外与毫米波学报, 2017, 36 (4): 420, 网络出版: 2017-10-12   

InGaAs/InP单光子雪崩光电二极管InP顶层掺杂研究

AInP cap layer doping density in InGaAs/InP single-photon avalanche diode
作者单位
中国电子科技集团公司第四十四研究所 化合物半导体光电子事业部, 重庆 400060
引用该论文

李彬, 陈伟, 黄晓峰, 迟殿鑫, 姚科明, 王玺, 柴松刚, 高新江. InGaAs/InP单光子雪崩光电二极管InP顶层掺杂研究[J]. 红外与毫米波学报, 2017, 36(4): 420.

LI Bin, CHEN Wei, HUANG Xiao-Feng, CHI Dian-Xin, YAO Ke-Ming, WANG Xi, CHAI Song-Gang, GAO Xin-Jiang. AInP cap layer doping density in InGaAs/InP single-photon avalanche diode[J]. Journal of Infrared and Millimeter Waves, 2017, 36(4): 420.

参考文献

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[2] Acerbi F, Frera D A, Tosi A, et al. Fast active quenching circuit for reducing avalanche charge and afterpulsing in InGaAs/InP single-photon avalanche diode[J]. IEEE Journal of Quantum Electronics , 2013, 49( 7):563-569.

[3] McCarthy A, Ren M, Frera A D. Kilometer-range depth imaging at 1550nm wavelength using an InGaAs/InP single-photon avalanche diode detector[J]. Optics Express, 2013, 21(19):22098-22113.

[4] Zhang J, Eraerds P, Walenta N, et al. 2.23 GHz gating InGaAs/InP single-photon avalanche diode for quantum key distribution[J]. Proc. SPIE, 2010, 7681:76810Z.

[5] Lee M H, Ha C, Jeong H S. Wavelength-division-multiplexed InGaAs-InP avalanched photodiodes for quantum key distribution[J]. Opt. Commun, 2016, 361:162-167.

[6] Bouzid A, Han S W, Lee M S, et al. Single-Photon Detector at Telecommunication Wavelengths Using an Analog Integrator for Ultra Small Avalanche Discrimination[J]. Applied Physics Express, 2013, 6:052201.

[7] Tosi A, Calandri N, Sanzaro M. Low-jitter, high detection efficiency InGaAs-InP single-photon avalanche diode[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2014, 20(6):3803406.

[8] Lee K, Lee B, Yoon S, et al. A Low noise planar-type avalanche photodiode using a single-diffusion process in Geiger-mode operation[J]. Japanese Journal of Applied Physics, 2013, 52:072201.

[9] Zappa F, Lacaita A, Cova S. Nanosecond single-photon timing with InGaAs/Inp photodiodes[J]. Opt. Lett., 1994, 19(11):846-848.

[10] Wei J, Dries C J, Wang H S. Optimization of 10-Gb/s long-wavelength floating guard ring InGaAs-InP avalanche photodiodes[J]. IEEE Photonics Technology Letters, 2002, 14(7):977-979.

[11] Acerbi F, Tosi A, Zappa F. Dark count rate dependence on bias voltage during gate-off in InGaAs/InP single-photon avalanche diode[J]. IEEE Photonics Technology Letters, 2013, 25(18):1832-1834.

[12] McIntosh K A, Donnelly J P, Oakley D C. InGaAs/InP avalanche diodes for photon counting at 1.06 μm[J]. Applied Physics Letters, 2002, 81(14):2505.

[13] Acerbi F, Anti M, Tosi A, et al. Design criteria for InGaAs/InP single-photon avalanche diode[J]. IEEE Photonics J., 2013, 5(2):6800209.

[14] Jiang X, Itzler M, Donnell K. InP-based single-photon detectors and Geiger-mode APD arrays for quantum communications applications[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2015, 21(3):3800112.

李彬, 陈伟, 黄晓峰, 迟殿鑫, 姚科明, 王玺, 柴松刚, 高新江. InGaAs/InP单光子雪崩光电二极管InP顶层掺杂研究[J]. 红外与毫米波学报, 2017, 36(4): 420. LI Bin, CHEN Wei, HUANG Xiao-Feng, CHI Dian-Xin, YAO Ke-Ming, WANG Xi, CHAI Song-Gang, GAO Xin-Jiang. AInP cap layer doping density in InGaAs/InP single-photon avalanche diode[J]. Journal of Infrared and Millimeter Waves, 2017, 36(4): 420.

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