发光学报, 2017, 38 (1): 63, 网络出版: 2017-02-09
InGaN/GaN 多量子阱LED载流子泄漏与温度关系研究
Temperature-dependent Carrier Leakage in InGaN/GaN Multiple Quantum Wells Light-emitting Diodes
补充材料
刘诗涛, 王立, 伍菲菲, 杨祺, 何沅丹, 张建立, 全知觉, 黄海宾. InGaN/GaN 多量子阱LED载流子泄漏与温度关系研究[J]. 发光学报, 2017, 38(1): 63. LIU Shi-tao, WANG Li, WU Fei-fei, YANY Qi, HE Yuan-dan, ZHANG Jian-li, QUAN Zhi-jue, HUANG Hai-bin. Temperature-dependent Carrier Leakage in InGaN/GaN Multiple Quantum Wells Light-emitting Diodes[J]. Chinese Journal of Luminescence, 2017, 38(1): 63.
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