红外与激光工程, 2016, 45 (5): 0520002, 网络出版: 2016-06-12
不同退火处理的台面型In0.83Ga0.17As pin光电二极管暗电流分析
Dark current analysis of mesa type In0.83Ga0.17As p-i-n photodiodes with different annealing treatment
补充材料
李平, 李淘, 邓双燕, 李雪, 邵秀梅, 唐恒敬, 龚海梅. 不同退火处理的台面型In0.83Ga0.17As pin光电二极管暗电流分析[J]. 红外与激光工程, 2016, 45(5): 0520002. Li Ping, Li Tao, Deng Shuangyan, Li Xue, Shao Xiumei, Tang Hengjing, Gong Haimei. Dark current analysis of mesa type In0.83Ga0.17As p-i-n photodiodes with different annealing treatment[J]. Infrared and Laser Engineering, 2016, 45(5): 0520002.