利用ICPCVD方法在GaN上沉积氧化硅薄膜的特性
刘秀娟, 张燕, 李向阳. 利用ICPCVD方法在GaN上沉积氧化硅薄膜的特性[J]. 红外与毫米波学报, 2015, 34(1): 23.
LIU Xiu-Juan, ZHANG Yan, LI Xiang-Yang. Characterization of silicon oxide film grown on GaN deposited by ICPCVD[J]. Journal of Infrared and Millimeter Waves, 2015, 34(1): 23.
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刘秀娟, 张燕, 李向阳. 利用ICPCVD方法在GaN上沉积氧化硅薄膜的特性[J]. 红外与毫米波学报, 2015, 34(1): 23. LIU Xiu-Juan, ZHANG Yan, LI Xiang-Yang. Characterization of silicon oxide film grown on GaN deposited by ICPCVD[J]. Journal of Infrared and Millimeter Waves, 2015, 34(1): 23.
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