发光学报, 2017, 38 (7): 923, 网络出版: 2017-07-05
量子阱结构对含V形坑InGaN/GaN蓝光LED效率衰减的影响
Effect of Quantum Well Structure on The Efficiency Droop of V-pits-containing InGaN/GaN Blue LED
补充材料
吕全江, 莫春兰, 张建立, 吴小明, 刘军林, 江风益. 量子阱结构对含V形坑InGaN/GaN蓝光LED效率衰减的影响[J]. 发光学报, 2017, 38(7): 923. LYU Quan-jiang, MO Chun-lan, ZHANG Jian-li, WU Xiao-ming, LIU Jun-lin, JIANG Feng-yi. Effect of Quantum Well Structure on The Efficiency Droop of V-pits-containing InGaN/GaN Blue LED[J]. Chinese Journal of Luminescence, 2017, 38(7): 923.