量子阱结构对含V形坑InGaN/GaN蓝光LED效率衰减的影响

吕全江; 莫春兰; 张建立; 吴小明; 刘军林; 江风益

doi:doi:10.3788/fgxb20173807.0923

发光学报, 2017, 38 (7): 923, 网络出版: 2017-07-05

量子阱结构对含V形坑InGaN/GaN蓝光LED效率衰减的影响

Effect of Quantum Well Structure on The Efficiency Droop of V-pits-containing InGaN/GaN Blue LED

论文大纲

吕全江莫春兰 ^*张建立吴小明刘军林江风益

作者单位

南昌大学国家硅基LED工程技术研究中心, 江西南昌 330047

硅衬底 InGaN/GaN蓝光LED 效率衰减 V形坑量子阱结构 Si substrate InGaN/GaN blue LED efficiency droop V-shaped pits quantum well structure

摘要

使用MOCVD在图形化Si衬底上生长了含V形坑的InGaN/GaN蓝光LED。通过改变生长温度, 生长了禁带宽度稍大的载流子限制阱和禁带宽度稍小的发光阱, 研究了两类量子阱组合对含V形坑InGaN/GaN基蓝光LED效率衰减的影响。使用高分辨率X射线衍射仪和LED电致发光测试系统对LED外延结构和LED光电性能进行了表征。结果表明: 限制阱靠近n层、发光阱靠近p层的新型量子阱结构, 在室温75 A/cm2时的外量子效率相对于其最高点仅衰减12.7% , 明显优于其他量子阱结构的16.3%、16.0%、28.4%效率衰减, 且只有这种结构在低温时(T≤150 K)未出现内量子效率随电流增大而剧烈衰减的现象。结果表明, 合理的量子阱结构设计能够显著提高电子空穴在含V形坑量子阱中的有效交叠, 促进载流子在阱间交互, 提高载流子匹配度, 抑制电子泄漏, 从而减缓效率衰减、提升器件光电性能。

Abstract

V-pits-containing InGaN/GaN blue LEDs were grown on patterned Si substrate by metal-organic chemical vapor deposition (MOCVD). A carrier confinement quantum well(QW)with a larger band gap and a light-emitting QW with a slightly smaller band gap were grown by tuning growth temperature. The effect of QW structure on the efficiency droop performance of V-pits-containing InGaN/GaN blue LED was investigated with some means to mix the two different types of QW. LED epitaxial wafers and LED photoelectric properties were characterized by high-resolution X-ray diffraction and LED test system. For the novel quantum well structure in which the confinement QW close to the n-side and the light-emitting QW close to the p-side, the droop of the external quantum efficiency is only 12.7%, which shows a more significant improvement compared with other QW structures (16.3%, 16.0%, 28.4%). What’s more, only for this kind of structure, the internal quantum efficiency does not decrease sharply with the increasing of drive current at low temperature(T≤150 K). The results show that a reasonable design of QW structure can significantly improve the effective overlap of electron-hole pairs in V-pits-containing InGaN/GaN QWs, promote carriers interaction between wells, and then improve carriers matching degree, inhibit electron leakage, retard efficiency droop, and finally enhance the photoelectric properties of devices.

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吕全江, 莫春兰, 张建立, 吴小明, 刘军林, 江风益. 量子阱结构对含V形坑InGaN/GaN蓝光LED效率衰减的影响[J]. 发光学报, 2017, 38(7): 923. LYU Quan-jiang, MO Chun-lan, ZHANG Jian-li, WU Xiao-ming, LIU Jun-lin, JIANG Feng-yi. Effect of Quantum Well Structure on The Efficiency Droop of V-pits-containing InGaN/GaN Blue LED[J]. Chinese Journal of Luminescence, 2017, 38(7): 923.

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