PbTe中红外光伏探测器

利用自主的分子束外延(MBE)技术在CdZnTe(111)基底上生长PbTe半导体探测器材料, 通过在PbTe薄膜上沉积In2O3透明导电薄膜、ZnS绝缘保护层和In薄膜做电极, 制成PbTe结型中红外光伏探测器．在77 K温度下, 器件响应波长为1.5～5.5 μm, 实验测量的探测率为2×1010 cm·Hz1/2W-1, 由R0A值计算的探测器峰值探测率达到4.35×1010 cm·Hz1/2W-1．随着温度的升高, 截止波长发生蓝移, 探测率降低．分析了影响探测器探测率和R0A值的主要因素．

Abstract

PbTe thin films on CdZnTe(111) substrates were epitaxially grown by Molecular Beam Epitaxy. Prototype photovoltaic mid-IR detectors were fabricated using ZnS thin films as insulated materials, In2O3 as transparent conductive thin films, and metallic In thin films as the Ohmic contact electrodes. The wavelength response of the detectors covers the range from 1.5 μm to 5.5 μm at 77 K, and the detectivity is higher than 2×1010 cm·Hz1/2W-1. The peak detectivity D*λ calculated using R0A data reaches 4.35×1010 cm·Hz1/2W-1 at 77 K. The cut-off wavelength blue shifts and the detectivity decreases as the measurement temperatures rise. The main factors that influence the detectivity and R0A parameters are discussed.

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魏晓东, 蔡春峰, 张兵坡, 胡炼, 吴惠桢, 张永刚, 冯靖文, 林加木, 林春, 方维政, 戴宁. PbTe中红外光伏探测器[J]. 红外与毫米波学报, 2011, 30(4): 293. WEI Xiao-Dong, CAI Chun-Feng, ZHANG Bing-Po, HU Lian, WU Hui-Zhen, ZHANG Yong-Gang, FENG Jing-Wen, LIN Jia-Mu, LIN Chun, FANG Wei-Zheng, DAI Ning. PbTe photovoltaic mid-IR detectors[J]. Journal of Infrared and Millimeter Waves, 2011, 30(4): 293.

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