发光学报, 2015, 36 (2): 192, 网络出版: 2015-02-15  

预制层溅射气压对CIGS薄膜结构及器件的影响

Influence of Sputtering Pressure on The Structure and Device Properties of CIGS Thin Films
作者单位
1 南开大学电子信息与光学工程学院 光电子薄膜与器件研究所, 天津 300071
2 天津城建大学理学院 应用物理系, 天津 300084
摘要
研究了金属预制层制备过程中溅射气压对Cu(In1-xGax)Se2(CIGS)薄膜及电池器件性能的影响。通过调节溅射气压改变预制层的结晶状态及疏松度与粗糙度, 在合适的预制层结构下, 活性硒化热处理过程中, 可使Ga有效地掺入到薄膜中形成优质的CIGS固溶体。高溅射气压会使预制层过于致密, 呈现非晶态趋势。经活性硒化热处理后, CIGS薄膜容易产生CIS与CGS“两相分离”现象, 从而导致CIGS薄膜太阳电池的开路电压和填充因子降低, 电池转换效率由10.03%降低到5.02%。
Abstract
The influence of sputtering pressure on the structure and device performances of Cu(In1-xGax)Se2 (CIGS) thin films is investigated. The crystalline and roughness of precursors can be moderated by choosing appropriate sputtering pressure, which may facilitate Ga incorporation into the lattice during the selenization process. With the sputtering pressure increases, the precursors tend to be amorphous state and become denser. As a result, the selenized films may display “phase separation” of CIS and CGS which results in decrease of Voc and FF, and the cell efficiency drops from 10.03% to 5.02%.
参考文献

[1] Wang Y C, Shieh H D. Double-graded bandgap in Cu(In,Ga)Se2 thin film solar cells by low toxicity selenization process [J]. Appl. Phys. Lett., 2014, 105:073901-1-3.

[2] Lin M, Zhang F M, Wu X S. Preparation and effect of porous silicon on the surface of silicon solar cells [J]. Chin. J. Lumin.(发光学报), 2013, 34(6):758-762 (in Chinese).

[3] Liao K H, Su C Y, Ding Y T, et al. Effects of Ga accumulation on the microstructure of Cu(In1-x,Gax)Se2 thin films during selenization [J]. J. Alloys Compd., 2013, 581:250-256.

[4] Marudachalam M, Birkmire R W, Hichri H, et al. Phases, morphology, and diffusion in CuInxGa1-xSe2 thin films [J]. J. Appl. Phys., 1997, 82(6):2896-2905.

[5] Niki S, Contreras M, Repins I, et al. CIGS absorbers and processes [J]. Prog. Photovolt.: Res. Appl., 2010, 18(6):453-466.

[6] Li Z H, Cho E S, Kwon S J. Crystal growth of Cu(In,Ga)Se2 film by RTP annealing of the stacked elemental layers formed by E-beam evaporation [J]. J. Cryst. Growth, 2014, 387:117-123.

[7] Lin Y C, Yao X J, Wang L C, et al. Improving simultaneous of crystallization and Ga homogenization in Cu(In,Ga)Se2 film using an evaporated In film [J]. J. Alloys Compd., 2013, 572:31-36.

[8] Thornton J A. Influence of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coatings [J]. J. Vac. Sci. Technol., 1974, 11(4):666-670.

[9] Adurodija F O, Kim S K, Kim S D, et al. Characterization of co-sputtered Cu-In alloy precursors for CuInSe2 thin flms fabrication by close-spaced selenization [J]. Sol. Energy Mater. Sol. Cell, 1998, 55:225-236.

[10] Chen J S, Kolawa E, Nicolet M A. Cu/In deposited at room temperature: Morphology, phases and reaction [J]. Solar Cells, 1991, 30:451-458.

[11] Li Z H, Cho E S, Kwon S J. Selenization annealing effect of DC-sputtered metallic precursors using the rapid thermal process for Cu(In,Ga)Se2 thin film solar cells [J]. Thin Solid Films, 2013, 547:156-162.

[12] Fontanee X, Izquierdo-Roca, Calvo-Barrio V, et al. Investigation of compositional inhomogeneities in complex polycrystalline Cu(In,Ga)Se2 layers for solar cells [J]. Appl. Phys. Lett., 2009, 95(26):261912-1-3.

[13] Minceva-Sukarova B, Najdoski M, Grozdanov I, et al. Raman spectra of thin solid films of some metal sulfides [J]. J. Mol. Struc., 1997, 410-411:267-270.

[14] Ishizuka S, Yamada A, Fons P, et al. Texture and morphology variations in (In,Ga)2Se3 and Cu(In,Ga)Se2 thin films grown with various Se source conditions [J]. Prog. Photovolt.: Res. Appl., 2013, 21:44-53.

[15] Cahen D, Noufi R. Free energy and enthalpies of possible gas phase and surface reactions for preparation of CuInSe2 [J]. J. Phys. Chem. Solid, 1991, 52:947-961.

[16] Lundberg O, Edoff M, Stolt L. The effect of Ga-grading in CIGS thin film solar cells [J]. Thin Solid Films, 2005, 480-481:520-525.

李光旻, 刘玮, 林舒平, 李晓东, 周志强, 何青, 张毅, 刘芳芳, 孙云. 预制层溅射气压对CIGS薄膜结构及器件的影响[J]. 发光学报, 2015, 36(2): 192. LI Guang-min, LIU Wei, LIN Shu-ping, LI Xiao-dong, ZHOU Zhi-qiang, HE Qing, ZHANG Yi, LIU Fang-fang, SUN Yun. Influence of Sputtering Pressure on The Structure and Device Properties of CIGS Thin Films[J]. Chinese Journal of Luminescence, 2015, 36(2): 192.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!