根据大容量能库型装置双极性充电电源对采样电路的高鲁棒性、正负极性均可控等要求，研制了一种隔离电压大于30 kV、隔离转换电压误差小于0.1%的正负双极性直流高压隔离采样电路。采用电压/频率、频率/电压转换方法，通过光纤、变压器隔离等措施，实现了正负双极性直流高压同时隔离采样，解决了目前双极性直流高压电源存在的正负极性电压不平衡、控制信号与高功率系统地隔离不完全问题，提高了电源的抗电磁干扰能力。该电路在±10 kV双极性充电输出时，正负极性电压偏差小于0.1%，100多台充电电源在18.3 MJ脉冲装置放电产生的复杂电磁干扰环境下可靠稳定运行。

激光的激射需要高浓度的增益介质，但增益介质浓度的过高又会带来浓度猝灭等不利因素，这些不利因素将会降低增益介质的发光效率。为解决这一矛盾，通过超分子策略，将有机非线性光学材料4-（4-二甲基氨基苯乙烯基）甲基吡啶对甲基苯磺酸盐（DAST）分子包覆于羟丙基-β-环糊精（HP-β-CD）分子的空腔中，并制备了DAST@HP-β-CD超分子水溶液。通过这种超分子包覆，可以大幅抑制DAST分子间的去活碰撞和分子内的Trans-Cis异构化，实现约6倍的荧光增强。不仅如此，在非线性光学效应方面，DAST@HP-β-CD超分子可通过多光子吸收而被激发。继而，以波长为1 064 nm的纳秒脉冲激光泵浦超分子水溶液实现了二光子泵浦激射，激发阈值为平均功率620 mW。再者，以波长为1 570 nm的非秒脉冲激光泵浦超分子水溶液，实现了三光子泵浦激射，激发阈值为峰值功率0.3 GW。在多光子荧光显微、三维信息存储等方面，超分子体系展示了良好的应用前景。

Femtosecond laser inscription or writing has been recognized as a powerful technique to engineer various materials toward a number of applications. By efficient modification of refractive indices of dielectric crystals, optical waveguides with diverse configurations have been produced by femtosecond laser writing. The waveguiding properties depend not only on the parameters of the laser writing but also on the nature of the crystals. The mode profile tailoring and polarization engineering are realizable by selecting appropriate fabrication conditions. In addition, regardless of the complexity of crystal refractive index changes induced by ultrafast pulses, several three-dimensional geometries have been designed and implemented that are useful for the fabrication of laser-written photonic chips. Some intriguing devices, e.g., waveguide lasers, wavelength converters, and quantum memories, have been made, exhibiting potential for applications in various areas. Our work gives a concise review of the femtosecond laser-inscribed waveguides in dielectric crystals and focuses on the recent advances of this research area, including the fundamentals, fabrication, and selected photonic applications.