Orbital angular momentum (OAM), described by an azimuthal phase term exp ( jlθ ) , has unbound orthogonal states with different topological charges l. Therefore, with the explosive growth of global communication capacity, especially for short-distance optical interconnects, light-carrying OAM has proved its great potential to improve transmission capacity and spectral efficiency in the space-division multiplexing system due to its orthogonality, security, and compatibility with other techniques. Meanwhile, 100-m free-space optical interconnects become an alternative solution for the “last mile” problem and provide interbuilding communication. We experimentally demonstrate a 260-m secure optical interconnect using OAM multiplexing and 16-ary quadrature amplitude modulation (16-QAM) signals. We study the beam wandering, power fluctuation, channel cross talk, bit-error-rate performance, and link security. Additionally, we also investigate the link performance for 1-to-9 multicasting at the range of 260 m. Considering that the power distribution may be affected by atmospheric turbulence, we introduce an offline feedback process to make it flexibly controllable.

Explosive growth in demand for data traffic has prompted exploration of the spatial dimension of light waves, which provides a degree of freedom to expand data transmission capacity. Various techniques based on bulky optical devices have been proposed to tailor light waves in the spatial dimension. However, their inherent large size, extra loss, and precise alignment requirements make these techniques relatively difficult to implement in a compact and flexible way. In contrast, three-dimensional (3D) photonic chips with compact size and low loss provide a promising miniaturized candidate for tailoring light in the spatial dimension. Significantly, they are attractive for chip-assisted short-distance spatial mode optical interconnects that are challenging to bulky optics. Here, we propose and fabricate femtosecond laser-inscribed 3D photonic chips to tailor orbital angular momentum (OAM) modes in the spatial dimension. Various functions on the platform of 3D photonic chips are experimentally demonstrated, including the generation, (de)multiplexing, and exchange of OAM modes. Moreover, chip-chip and chip–fiber–chip short-distance optical interconnects using OAM modes are demonstrated in the experiment with favorable performance. This work paves the way to flexibly tailor light waves on 3D photonic chips and offers a compact solution for versatile optical interconnects and other emerging applications with spatial modes.

Semiconductor lasers, an important subfield of semiconductor photonics, have fundamentally changed many aspects of our lives and enabled many technologies since their creation in the 1960s. As in other semiconductor-based fields, such as microelectronics, miniaturization has been a constant theme, with nanolasers being an important frontier of research over the last decade. We review the progress, existing issues, and future prospects of nanolasers, especially in relation to their potential application in chip-scale optical interconnects. One of the important challenges in this application is minimizing the size and energy consumption of nanolasers. We begin with the application background of this challenge and then compare basic features of various semiconductor lasers. We present existing issues with nanolasers and discuss potential solutions to meet the size and energy-efficiency challenge. Our discussions cover a broad range of miniaturized lasers, including plasmonic nanolasers and lasers with two-dimensional monolayer gain materials, with focus on near-infrared wavelengths.

In silicon photonics, the carrier depletion scheme has been the most commonly used mechanism for demonstrating high-speed electro-optic modulation. However, in terms of phase modulation efficiency, carrier-accumulation-based devices potentially offer almost an order of magnitude improvement over those based on carrier depletion. Previously reported accumulation modulator designs only considered vertical metal-oxide-semiconductor (MOS) capacitors, which imposes serious restrictions on the design flexibility and integratability with other photonic components. In this work, for the first time to our knowledge, we report experimental demonstration of an all-silicon accumulation phase modulator based on a lateral MOS capacitor. Using a Mach–Zehnder interferometer modulator with a 500-μm-long phase shifter, we demonstrate high-speed modulation up to 25 Gbit/s with a modulation efficiency (VπLπ) of 1.53 V·cm.

A monolithic integrated few-mode transmitter comprising of two directly modulated distributed feedback lasers and a multimode-interference-coupler-based mode converter-multiplexer with 66% mode conversion efficiency was designed and demonstrated. A fundamental TE0 mode and a first-order TE1 mode were successfully generated from the transmitter, with the output power of 4 and 5.5 mW at a pump current of around 150 mA, respectively, at the common output port. The small signal modulation bandwidth of the TE0 and TE1 channels reached 17.4 and 14.7 GHz, respectively. Error-free 2×10-Gbit/s direct modulation of the two-mode transmitter was demonstrated, with a power penalty of 4.3 dB between the TE0 mode and the TE1 mode at the bit error rate of 1×10 9.

We present compact silicon-arrayed waveguide grating routers (AWGRs) with three different channel spacings of 20, 6.4, and 3.2 nm for optical interconnect systems. The AWGR with the 20 nm channel spacing shows a low loss of 2.5 dB and a low crosstalk of 20 dB and has a footprint of only 0.27 mm×0.19 mm. The AWGR with the channel spacing of 6.4 nm has loss ranging from 3 to 8 dB, and the crosstalk is 18 dB. As for the 3.2 nm channel spacing, the loss is about 4 dB, and the crosstalk is 12 dB.

The ability to modulate an optical field via an electric field is regarded as a key function of electro-optic interconnects, which are used in optical communications and information-processing systems. One of the main devices required for such interconnects is the electro-optic modulator (EOM). Current EOMs based on the electro-optic and electro-absorption effects often are bulky and power-inefficient due to the weak electro-optic properties of their constituent materials. Here, we propose a new mechanism to produce an arbitrary-waveform EOM based on quantum interference, in which both the real and imaginary parts of the susceptibility are engineered coherently with super-high efficiency. Based on this EOM, a waveform interconnect from the voltage to the modulated optical absorption is realized. We expect that such a new type of electro-optic interconnect will have a broad range of applications, including in optical communications and networks.