纤锌矿结构GaAs（1010）表面特性的第一性原理研究
[1] . Kempa et al.. Singer-crystalline kinked semiconductor nanowire superstures[J]. Nature Nanotechnology, 2009, 4(12): 824-829.
[2] 杨青, 丁晔, 戴威 等. 半导体纳米线和氧化硅微光纤环型结复合结构激光器［J］. 激光与光电子学进展, 2010, 47(3): 03SC08
[3] 王新, 徐敏, 李理 等. 硅纳米线光电化学太阳能电池［J］. 激光与光电子学进展, 2009, 46(2): 41
[4] 李宝军. 基于纳米线的动态可调折射率传感器和光耦合实验［J］. 激光与光电子学进展, 2010, 47(3): 03SC13
[5] . . Design and fabrication of a compact multimode interference splitter with silicon photonic nanowires[J]. Chin. Opt. Lett., 2009, 7(11): 1041-1044.
[6] . O. Mariager, C. B. Srensen, M. Aagesen et al.. Facet structure of GaAs nanowires grown by molecular beam epitaxy[J]. Appl. Phys. Lett., 2007, 91(8): 083106.
[7] . Spirkoska, J. Arbiol, A. Gustafsson et al.. Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures[J]. Phys. Rev. B, 2009, 80(24): 245325.
[8] . C. Harmand, G. Patriarche, N. Péré-Laperne et al.. Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth[J]. Appl. Phys. Lett., 2005, 87(20): 203101.
[9] . H. Wu, X. Mei, D. Kim et al.. Growth, branching, and kinking of molecular-beam epitaxial 〈110〉 GaAs nanowires[J]. Appl. Phys. Lett., 2003, 83(16): 3368-3370.
[10] . Leitsmann, F. Bechstedt. Surface influence on stability and structure of hexagon-shaped III-V semiconductor nanorods[J]. J. Appl. Phys., 2007, 102(6): 063528.
[11] . D. Segall, Philip J. D. Lindan, M. J. Probert et al.. First-principles simulation: ideas, illustrations and the CASTEP code[J]. J. Phys., 2002, 14(11): 2717-2744.
[12] . W. Lu, S. Froyen et al.. Zunger, Zinc-blende-wurtzite polytypism in semiconductors[J]. Phys. Rev. B, 1992, 46(16): 10086-10097.
[13] . Moll, A. Kley, E. Pehlke et al.. GaAs equilibrium crystal shape from first principles[J]. Phys. Rev. B, 1996, 54(12): 8844-8855.
[14] . Liu, W. T. Zheng, Q. Jiang. First-principles study of the surface energy and work function of III-V semiconductor compounds[J]. Phys. Rev. B, 2007, 75(23): 235322.
[15] . B. Zhang, Suhuai Wei. Surface energy and the common dangling bond rule for semiconductors[J]. Phys. Rev. Lett., 2004, 92(8): 086102.
舒伟, 张霞, 黄辉, 黄永清, 任晓敏. 纤锌矿结构GaAs（1010）表面特性的第一性原理研究[J]. 激光与光电子学进展, 2011, 48(4): 041601. Shu Wei, Zhang Xia, Huang Hui, Huang Yongqing, Ren Xiaomin. First-Principles Study of Wurtzite GaAs(1010) Surface[J]. Laser & Optoelectronics Progress, 2011, 48(4): 041601.
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