RIE模式干法刻蚀ADS产品铝腐蚀改善研究
[1] 陈亮, 亢勇, 赵德刚, 等.Cl2/Ar/BCl3 ICP刻蚀对AlGaN的损伤研究［J］.固体电子学研究与进展, 2008, 28(3): 420-423.
CHEN L, KANG Y, ZHAO D G,et al. CI2/Ar/BCl3 inductively coupled plasma-induced etch damage of AIGaN ［J］. Research & Progress of Solid State Electronics, 2008, 28(3): 420-423. (in Chinese)
[2] 李涛, 冯海涛, 李晓刚, 等.2A12铝合金在含Cl-环境中的腐蚀行为和规律研究［J］.材料科学与工艺, 2011, 19(3): 43-48.
LI T, FENG H T, LI X G,et al. Corrosion behavior of2A12aluminumalloy inCl- containing solution ［J］. Materials Science and Technology, 2011, 19(3): 43-48. (in Chinese)
[3] 贾瑞灵, 翟熙伟, 严川伟.Cl-浓度对镁-铝合金β相模型合金腐蚀电化学行为的影响［J］.腐蚀科学与防护技术, 2010, 22(6): 474-478.
JIA R L, ZHAI X W, YAN C W. Influence of Cl-concentration on corrosion behavior of a model β-phase magnesium-aluminum alloy［J］.Corrosion Science and Protection Technology, 2010, 22(6): 474-478. (in Chinese)
[4] 劉聖烈, 崔螢石, 金奉柱, 等.用Al或Mo/Al/Mo低阻材料改善4-Mask工艺中Al腐蚀的方法(英文)［J］.液晶与显示, 2006, 21(5): 501-505.
YOO S Y, CHOI H S, KIM B J, et al. Preventing method of Al corrosion for applying improved 4-mask with low resistance material Al or Mo/Al/Mo ［J］. Chinese Journal of Liquid Crystals and Displays, 2006, 21(5): 501-505.
[5] 付玉霞, 刘志弘, 刘荣华, 等.铝-RIE刻蚀工艺［J］.半导体情报, 2000, 37(5): 37-40.
FU Y X, LIU Z H, LIU R H, et al. Process of Al-reactiveionetching［J］. Semiconductor Information, 2000, 37(5): 37-40. (in Chinese)
[6] 李希有, 周卫, 张伟, 等.Al-Si合金RIE参数选择［J］.半导体技术, 2004, 29(11): 19-21.
LIXY, ZHOU W, ZHANG W, et al. Reactive ion etching of Al-Si alloy: select etching parameters［J］. Semiconductor Technology, 2004, 29(11): 19-21. (in Chinese)
[7] 来五星, 廖广兰, 史铁林, 等.反应离子刻蚀加工工艺技术的研究［J］.半导体技术, 2006, 31(6): 414-417.
LAI W X, LIAO G L, SHI T L, et al. Study of reaction ion etching processing technique［J］.Semiconductor Technology, 2006, 31(6): 414-417. (in Chinese)
[8] 汪梅林, 汪永安.化学干法刻蚀在TFT-LCD工艺中的应用［J］.现代显示, 2016(12): 61-63.
WANG M L, WANG Y A. The application of CDE in TFT-LCD process ［J］.Advanced Display, 2016(12): 61-63. (in Chinese)
[9] 程正喜, 郭育林, 周嘉.SF6/O2气氛下Al对反应离子刻蚀Si的增强作用机理研究［J］.微细加工技术, 2007(1): : 56-59.
CHENG Z X, GUO Y L, ZHOU J. Study on mechanism of Al-enhanced etching of silicon by reactive ions in SF6/O2 environment［J］.Microfabrication Technology, 2007(1): 56-59. (in Chinese)
[10] 蒋会刚, 肖红玺, 王晏酩.TFT-LCD高温光照漏电流改善研究［J］.液晶与显示, 2016, 31(3): 283-289.
蒋会刚, 高建剑, 王晏酩, 赵海生, 王辉, 吴超. RIE模式干法刻蚀ADS产品铝腐蚀改善研究[J]. 液晶与显示, 2017, 32(7): 518. JIANG Hui-gang, GAO Jian-jian, WANG Yan-ming, ZHAO Hai-sheng, WANG Hui, WU Chao. Improvement of aluminum corrosion of ADS products by RIE etching mode dry etching[J]. Chinese Journal of Liquid Crystals and Displays, 2017, 32(7): 518.
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