发光学报, 2016, 37 (12): 1496, 网络出版: 2016-12-06   

氢退火对LPCVD生长的ZnO薄膜光学和电学性能的影响

Effect of Hydrogen Annealing on The Optical and Electrical Properties of ZnO Thin Films Grown by LPCVD
作者单位
1 江西科技学院 协同创新中心, 江西 南昌330098
2 江西科技学院 管理学院, 江西 南昌330098
3 浙江正泰太阳能科技有限公司, 浙江 杭州310053
引用该论文

李旺, 唐鹿, 杜江萍, 薛飞, 辛增念, 罗哲, 刘石勇. 氢退火对LPCVD生长的ZnO薄膜光学和电学性能的影响[J]. 发光学报, 2016, 37(12): 1496.

LI Wang, TANG Lu, DU Jiang-ping, XUE Fei, XIN Zeng-nian, LUO Zhe, LIU Shi-yong. Effect of Hydrogen Annealing on The Optical and Electrical Properties of ZnO Thin Films Grown by LPCVD[J]. Chinese Journal of Luminescence, 2016, 37(12): 1496.

参考文献

[1] FA S, STEINHAUSER J, NICOLAY S, et al.. Polycrystalline ZnO∶B grown by LPCVD as TCO for thin film silicon solar cells [J]. Thin Solid Films, 2010, 518(11): 2961-2966.

[2] NEUBERT S, WIMMER M, RUSKE F, et al.. Improved conversion efficiency of a-Si∶H/μc-Si∶H thin-film solar cells by using annealed Al-doped zinc oxide as front electrode material [J]. Prog. Photovolt., 2014, 22(12): 1285-1291.

[3] BUFFIRE M, BARREAU N, ARZEL L, et al.. Minimizing metast abilities in Cu(In, Ga)Se2/(CBD)Zn(S, O, OH)/i-ZnO-based solar cells [J]. Prog. Photovolt., 2015, 23(4): 462-469.

[4] TSUNOMURA Y, YOSHIMINE Y, TAGUCHI M, et al.. Twenty-two percent efficiency HIT solar cell [J]. Sol. Energy Mater. Sol. Cells, 2009, 93(6-7): 670-673.

[5] OREGAN B, GRTZEL M. A low-cost high-efficiency solar cell based on dye-sensitized colloidal TiO2 films [J]. Nature, 1991, 353(6346): 737-740.

[6] MATTEOCCI F, CIN L, DI GIACOMO F, et al.. High efficiency photovoltaic module based on mesoscopic organometal halide perovskite [J]. Prog. Photovolt., 2016, 24(4): 436-445.

[7] FA S, FEITKNECHT L, SCHLCHTER R, et al.. Rough ZnO layers by LP-CVD process and their effect in improving performances of amorphous and microcrystalline silicon solar cells [J]. Sol. Energy Mater. Sol. Cells, 2006, 90(18-19): 2960-2967.

[8] STEINHAUSER J, FA S, OLIVEIRA N, et al.. Transition between grain boundary and intragrain scattering transport mechanisms in boron-doped zinc oxide thin films [J]. Appl. Phys. Lett., 2007, 90(14): 142107-1-3.

[9] ADDONIZIO ML, DILETTO C. Doping influence on intrinsic stress and carrier mobility of LP-MOCVD-deposited ZnO∶B thin films [J]. Sol. Energy Mater. Sol. Cells, 2008, 92(11): 1488-1494.

[10] NICOLAY S, BENKHAIRA M, DING L, et al.. Control of CVD-deposited ZnO films properties through water/DEZ ratio: decoupling of electrode morphology and electrical characteristics [J]. Sol. Energy Mater. Sol. Cells, 2012, 105: 46-52.

[11] MLLER J, RECH B, SPRINGER J, et al.. TCO and light trapping in silicon thin film solar cells [J]. Sol. Energy, 2004, 77(6): 917-930.

[12] MANNA U, YOO J, DHUNGEL S K, et al.. The effect of the thickness of a ZnO∶Al back reflector on the performance of p-i-n thin film solar cells [J]. J. Korean Phys. Soc., 2005, 46(6): 1378-1382.

[13] ZHU H, HPKES J, BUNTE E, et al.. Novel etching method on high rate ZnO∶Al thin films reactively sputtered from dual tube metallic targets for silicon-based solar cells [J]. Sol. Energy Mater. Sol. Cells, 2011, 95(3): 964-968.

[14] HUANG Q, WANG Y F, WANG S, et al.. Transparent conductive ZnO∶B films deposited by magnetron sputtering [J]. Thin Solid Films, 2012, 520(18): 5960-5964.

[15] 石素君,朱德亮,吕有明,等. 氩气退火对氢掺杂AZO薄膜电学性能的影响 [J]. 发光学报, 2012, 33(7): 742-746.

    SHI S J, ZHU D L, LV Y M, et al.. Effects of post-annealing in Ar atmosphere on the electrical properties of HAZO films[J]. Chin. J. Lumin., 2012, 33(7): 742-746. (in Chinese)

[16] 张侠, 刘渝珍, 康朝阳, 等. 退火温度及退火气氛对ZnO薄膜的结构及发光性能的影响 [J]. 发光学报, 2010, 31(5): 613-618.

    ZHANG X, LIU Y Z, KANG C Y, et al.. Effects of annealing atmosphere and temperature on the structure and photoluminescence of ZnO films prepared by pulsed laser deposition [J]. Chin. J. Lumin., 2010, 31(5): 613-618. (in English)

[17] LIU W W, YAO B, LI Y F, et al.. Structure, luminescence and electrical properties of ZnO thin films annealed in H2 and H2O ambient: a comparative study [J]. Thin Solid Films, 2010, 518(14): 3923-3928.

[18] YAMADA Y, KADOWAKI K, KIKUCHI H, et al.. Positional variation and annealing effect in magnetron sputtered Ga-doped ZnO films [J]. Thin Solid Films, 2016, 609: 25-29.

[19] URGESSA Z N, MBULANGA C M, TANKIO DJIOKAP S R, et al.. The defect passivation effect of hydrogen on the optical properties of solution-grown ZnO nanorods [J]. Phys. B: Condens. Matter, 2016, 480: 48-52.

[20] MCANN M, WEBER K, BLAKERS A. Surface passivation by rehydrogenation of silicon-nitride-coated silicon wafers [J]. Prog. Photovolt., 2005, 13(3): 195-200.

[21] SCHULTE J, HARBAUER K, ELLMER K. Toward efficient Cu(In, Ga)Se2 solar cells prepared by reactive magnetron co-sputtering from metallic targets in an Ar∶H2Se atmosphere [J]. Prog. Photovolt., 2015, 23(12): 1793-1805.

李旺, 唐鹿, 杜江萍, 薛飞, 辛增念, 罗哲, 刘石勇. 氢退火对LPCVD生长的ZnO薄膜光学和电学性能的影响[J]. 发光学报, 2016, 37(12): 1496. LI Wang, TANG Lu, DU Jiang-ping, XUE Fei, XIN Zeng-nian, LUO Zhe, LIU Shi-yong. Effect of Hydrogen Annealing on The Optical and Electrical Properties of ZnO Thin Films Grown by LPCVD[J]. Chinese Journal of Luminescence, 2016, 37(12): 1496.

本文已被 1 篇论文引用
被引统计数据来源于中国光学期刊网
引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!