发光学报, 2016, 37 (12): 1496, 网络出版: 2016-12-06   

氢退火对LPCVD生长的ZnO薄膜光学和电学性能的影响

Effect of Hydrogen Annealing on The Optical and Electrical Properties of ZnO Thin Films Grown by LPCVD
作者单位
1 江西科技学院 协同创新中心, 江西 南昌330098
2 江西科技学院 管理学院, 江西 南昌330098
3 浙江正泰太阳能科技有限公司, 浙江 杭州310053
摘要
采用低压化学气相沉积(LPCVD)在玻璃衬底上制备了B掺杂ZnO(BZO)薄膜, 研究了氢气气氛退火对BZO薄膜光学性能和电学性能的影响。结果表明: 在氢气气氛下退火后, BZO薄膜的物相结构和透光率基本无变化, 但BZO薄膜的导电能力却明显提高。Hall测试结果表明: 在氢气下退火时载流子浓度基本保持不变, 但迁移率却明显提高。实验结果可为进一步提高BZO薄膜的光学电学综合性能提供借鉴。
Abstract
B doped ZnO (BZO) films were prepared on glass substrate by LPCVD method. The effect of hydrogen atmosphere annealing on the optical and electrical properties of BZO thin films was studied. The results show that the phase structure and the transmittance of the BZO films have no change after annealing in the hydrogen atmosphere, but the electrical conductivity of the BZO films is obviously improved. The Hall test results reveal that the carrier concentration is almost the same after hydrogen annealing, but the mobility is dramatically increased. The results in this paper should provide a reference for further improving the optical and electrical properties of BZO thin films.
参考文献

[1] FA S, STEINHAUSER J, NICOLAY S, et al.. Polycrystalline ZnO∶B grown by LPCVD as TCO for thin film silicon solar cells [J]. Thin Solid Films, 2010, 518(11): 2961-2966.

[2] NEUBERT S, WIMMER M, RUSKE F, et al.. Improved conversion efficiency of a-Si∶H/μc-Si∶H thin-film solar cells by using annealed Al-doped zinc oxide as front electrode material [J]. Prog. Photovolt., 2014, 22(12): 1285-1291.

[3] BUFFIRE M, BARREAU N, ARZEL L, et al.. Minimizing metast abilities in Cu(In, Ga)Se2/(CBD)Zn(S, O, OH)/i-ZnO-based solar cells [J]. Prog. Photovolt., 2015, 23(4): 462-469.

[4] TSUNOMURA Y, YOSHIMINE Y, TAGUCHI M, et al.. Twenty-two percent efficiency HIT solar cell [J]. Sol. Energy Mater. Sol. Cells, 2009, 93(6-7): 670-673.

[5] OREGAN B, GRTZEL M. A low-cost high-efficiency solar cell based on dye-sensitized colloidal TiO2 films [J]. Nature, 1991, 353(6346): 737-740.

[6] MATTEOCCI F, CIN L, DI GIACOMO F, et al.. High efficiency photovoltaic module based on mesoscopic organometal halide perovskite [J]. Prog. Photovolt., 2016, 24(4): 436-445.

[7] FA S, FEITKNECHT L, SCHLCHTER R, et al.. Rough ZnO layers by LP-CVD process and their effect in improving performances of amorphous and microcrystalline silicon solar cells [J]. Sol. Energy Mater. Sol. Cells, 2006, 90(18-19): 2960-2967.

[8] STEINHAUSER J, FA S, OLIVEIRA N, et al.. Transition between grain boundary and intragrain scattering transport mechanisms in boron-doped zinc oxide thin films [J]. Appl. Phys. Lett., 2007, 90(14): 142107-1-3.

[9] ADDONIZIO ML, DILETTO C. Doping influence on intrinsic stress and carrier mobility of LP-MOCVD-deposited ZnO∶B thin films [J]. Sol. Energy Mater. Sol. Cells, 2008, 92(11): 1488-1494.

[10] NICOLAY S, BENKHAIRA M, DING L, et al.. Control of CVD-deposited ZnO films properties through water/DEZ ratio: decoupling of electrode morphology and electrical characteristics [J]. Sol. Energy Mater. Sol. Cells, 2012, 105: 46-52.

[11] MLLER J, RECH B, SPRINGER J, et al.. TCO and light trapping in silicon thin film solar cells [J]. Sol. Energy, 2004, 77(6): 917-930.

[12] MANNA U, YOO J, DHUNGEL S K, et al.. The effect of the thickness of a ZnO∶Al back reflector on the performance of p-i-n thin film solar cells [J]. J. Korean Phys. Soc., 2005, 46(6): 1378-1382.

[13] ZHU H, HPKES J, BUNTE E, et al.. Novel etching method on high rate ZnO∶Al thin films reactively sputtered from dual tube metallic targets for silicon-based solar cells [J]. Sol. Energy Mater. Sol. Cells, 2011, 95(3): 964-968.

[14] HUANG Q, WANG Y F, WANG S, et al.. Transparent conductive ZnO∶B films deposited by magnetron sputtering [J]. Thin Solid Films, 2012, 520(18): 5960-5964.

[15] 石素君,朱德亮,吕有明,等. 氩气退火对氢掺杂AZO薄膜电学性能的影响 [J]. 发光学报, 2012, 33(7): 742-746.

    SHI S J, ZHU D L, LV Y M, et al.. Effects of post-annealing in Ar atmosphere on the electrical properties of HAZO films[J]. Chin. J. Lumin., 2012, 33(7): 742-746. (in Chinese)

[16] 张侠, 刘渝珍, 康朝阳, 等. 退火温度及退火气氛对ZnO薄膜的结构及发光性能的影响 [J]. 发光学报, 2010, 31(5): 613-618.

    ZHANG X, LIU Y Z, KANG C Y, et al.. Effects of annealing atmosphere and temperature on the structure and photoluminescence of ZnO films prepared by pulsed laser deposition [J]. Chin. J. Lumin., 2010, 31(5): 613-618. (in English)

[17] LIU W W, YAO B, LI Y F, et al.. Structure, luminescence and electrical properties of ZnO thin films annealed in H2 and H2O ambient: a comparative study [J]. Thin Solid Films, 2010, 518(14): 3923-3928.

[18] YAMADA Y, KADOWAKI K, KIKUCHI H, et al.. Positional variation and annealing effect in magnetron sputtered Ga-doped ZnO films [J]. Thin Solid Films, 2016, 609: 25-29.

[19] URGESSA Z N, MBULANGA C M, TANKIO DJIOKAP S R, et al.. The defect passivation effect of hydrogen on the optical properties of solution-grown ZnO nanorods [J]. Phys. B: Condens. Matter, 2016, 480: 48-52.

[20] MCANN M, WEBER K, BLAKERS A. Surface passivation by rehydrogenation of silicon-nitride-coated silicon wafers [J]. Prog. Photovolt., 2005, 13(3): 195-200.

[21] SCHULTE J, HARBAUER K, ELLMER K. Toward efficient Cu(In, Ga)Se2 solar cells prepared by reactive magnetron co-sputtering from metallic targets in an Ar∶H2Se atmosphere [J]. Prog. Photovolt., 2015, 23(12): 1793-1805.

李旺, 唐鹿, 杜江萍, 薛飞, 辛增念, 罗哲, 刘石勇. 氢退火对LPCVD生长的ZnO薄膜光学和电学性能的影响[J]. 发光学报, 2016, 37(12): 1496. LI Wang, TANG Lu, DU Jiang-ping, XUE Fei, XIN Zeng-nian, LUO Zhe, LIU Shi-yong. Effect of Hydrogen Annealing on The Optical and Electrical Properties of ZnO Thin Films Grown by LPCVD[J]. Chinese Journal of Luminescence, 2016, 37(12): 1496.

本文已被 1 篇论文引用
被引统计数据来源于中国光学期刊网
引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!