Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700  nm

Hilal Cansizoglu; Cesar Bartolo-Perez; Yang Gao; Ekaterina Ponizovskaya Devine; Soroush Ghandiparsi; Kazim G. Polat; Hasina H. Mamtaz; Toshishige Yamada; Aly F. Elrefaie; Shih-Yuan Wang; M. Saif Islam

doi:doi:10.1364/PRJ.6.000734

Photonics Research, 2018, 6 (7): 07000734, Published Online: Jul. 4, 2018

Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700 nm

Hilal Cansizoglu ^1†Cesar Bartolo-Perez ^1†Yang Gao ^1,*Ekaterina Ponizovskaya Devine ^1,2Soroush Ghandiparsi ¹Kazim G. Polat ¹Hasina H. Mamtaz ¹Toshishige Yamada ^2,3Aly F. Elrefaie ^1,2Shih-Yuan Wang ²M. Saif Islam ^1,4

Author Affiliations

¹ Electrical and Computer Engineering, University of California—Davis, Davis, California 95618, USA

² W&WSens Devices, Inc., 4546 El Camino, Suite 215, Los Altos, California 94022, USA

³ Electrical Engineering, Baskin School of Engineering, University of California, Santa Cruz, California 95064, USA

⁴ e-mail: sislam@ucdavis.edu

Basic Information

DOI:	10.1364/PRJ.6.000734
中图分类号:	--
栏目:	Integrated Optics
项目基金:	Army Research Office (ARO)10.13039/100000183（W911NF-14-4-0341）、 W&、WSens Devices, Inc、
收稿日期:	Mar. 20, 2018
修改稿日期:	Apr. 26, 2018
网络出版日期:	Jul. 4, 2018
通讯作者:	Yang Gao (yangao@ucdavis.edu)
备注:	--

Hilal Cansizoglu, Cesar Bartolo-Perez, Yang Gao, Ekaterina Ponizovskaya Devine, Soroush Ghandiparsi, Kazim G. Polat, Hasina H. Mamtaz, Toshishige Yamada, Aly F. Elrefaie, Shih-Yuan Wang, M. Saif Islam. Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700 nm[J]. Photonics Research, 2018, 6(7): 07000734.

Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700 nm

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