Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700 nm | Photonics Research -- 中国光学期刊网

Photonics Research, 2018, 6 (7): 07000734, Published Online: Jul. 4, 2018

Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700 nm

Hilal Cansizoglu ^1†Cesar Bartolo-Perez ^1†Yang Gao ^1,*Ekaterina Ponizovskaya Devine ^1,2Soroush Ghandiparsi ¹Kazim G. Polat ¹Hasina H. Mamtaz ¹Toshishige Yamada ^2,3Aly F. Elrefaie ^1,2Shih-Yuan Wang ²M. Saif Islam ^1,4

Author Affiliations

¹ Electrical and Computer Engineering, University of California—Davis, Davis, California 95618, USA

² W&WSens Devices, Inc., 4546 El Camino, Suite 215, Los Altos, California 94022, USA

³ Electrical Engineering, Baskin School of Engineering, University of California, Santa Cruz, California 95064, USA

⁴ e-mail: sislam@ucdavis.edu

Photodiodes Ultrafast devices

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Hilal Cansizoglu, Cesar Bartolo-Perez, Yang Gao, Ekaterina Ponizovskaya Devine, Soroush Ghandiparsi, Kazim G. Polat, Hasina H. Mamtaz, Toshishige Yamada, Aly F. Elrefaie, Shih-Yuan Wang, M. Saif Islam. Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700 nm[J]. Photonics Research, 2018, 6(7): 07000734.

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