选择区域外延生长中掩模介质表面Ga原子的迁移特性

杨杭; 邢洁莹; 陈伟杰; 陈杰; 韩小标; 钟昌明; 梁捷智; 黄德佳; 侯雅倩; 吴志盛; 张佰君

doi:doi:10.16818/j.issn1001-5868.2018.05.011

半导体光电, 2018, 39 (5): 659, 网络出版: 2019-01-10

选择区域外延生长中掩模介质表面Ga原子的迁移特性

Migration Characterization of Ga Adatoms on Dielectric Surface in Selective Area Growth

论文大纲

杨杭邢洁莹陈伟杰陈杰韩小标钟昌明梁捷智黄德佳侯雅倩吴志盛张佰君 ^*

作者单位

中山大学电子与信息工程学院光电材料与技术国家重点实验室, 广州 510006

金属有机化合物化学气相沉积选择区域外延生长迁移长度 MOCVD SAG migration length

摘要

选择区域外延生长（SAG）技术是微纳尺度GaN基发光器件的主要制备方法之一。在选择区域外延生长中, Ⅲ族金属原子在掩模介质表面的迁移行为对微纳器件的形貌及特性有非常重要的影响。利用金属有机化学气相沉积（MOCVD）系统研究了选择区域外延生长中Ga原子在掩模介质表面上的迁移特性, 得到了不同反应腔压力和生长温度下Ga原子在掩模介质表面的迁移长度, 且在保持其他生长条件不变的情况下, 适当降低反应腔压力或提高生长温度可提高Ga原子的迁移长度。

Abstract

Selective area epitaxial growth technique (SAG) is one of the main methods for the fabrication of microscale GaNbased LEDs. The migration behavior of metal atoms of group Ⅲ on the surface of dielectric mask during the selective area epitaxial growth plays an importmant role in the morphology and characteristics of microscale GaN devices. In this paper, the migration characteristics of Ga atoms on the surface of dielectric mask in selective area epitaxial growth were studied in metalorganic chemical vapor deposition (MOCVD) system. The migration lengths of Ga atoms on the surface of dielectric mask were obtained under different pressure and growth temperature of the reaction chamber. Keeping other growth conditions unchanged, the migration length of Ga atoms increases with the growth temperature and decreases with the reaction pressure.

参考文献

[1] Osinsky A, Gangopadhyay S, Gaska R, et al. Low noise pπn GaN ultraviolet photodetectors[J]. Appl. Phys. Lett., 1997, 71(16): 23342336.

[2] Tran C A, Osinski A, Karlicek R F, et al. Growth of InGaN/GaN multiplequantumwell blue lightemitting diodes on silicon by metalorganic vapor phase epitaxy[J]. Appl. Phys. Lett., 1999, 75(11): 14941496.

[3] Mo C, Fang W, Pu Y, et al. Growth and characterization of InGaN blue LED structure on Si(111) by MOCVD[J]. J. of Crystal Growth, 2005, 285(3): 312317.

[4] 冯嘉恒, 唐立丹, 刘邦武, 等. 等离子增强原子层沉积低温生长AlN薄膜[J]. 物理学报, 2013, 62(11): 436441.

Feng Jiaheng, Tang Lidan, Liu Bangwu, et al. Lowtemperature growth of AlN thin films by plasmaenhanced atomic layer deposition[J]. Act. Phys. Sin., 2013, 62(11): 436441.

[5] 张李骊, 刘战辉, 修向前, 等. 氢化物气相外延生长高质量GaN膜生长参数优化研究[J]. 物理学报, 2013, 62(20): 438447.

Zhang Lili, Liu Zhanhui, Xiu Xiangqian, et al. Optimization of the parameters for growth highquality GaN film by hydride vapor phase epitaxy[J]. Act. Phys. Sin., 2013, 62(20): 438447.

[6] Zhou D, Lu H, Chen D J, et al. Vacuum violet photoresponse of AlGaNbased metalsemiconductormetal photodetectors[J]. Chinese Phys. Lett., 2013, 30(11): 468477.

[7] Wang Jun, Zhao Meng, Zuo Sibin, et al. Growth of threaded AlN whiskers by a physical vapor transport method[J]. Chinese Phys. B, 2014, 23(8): 088103.

[8] Huang Jie, Li Ming, Deng Zehua, et al. Lg=100nm Tshaped gate AlGaN/GaN HEMTs on Si substrates with nonplanar source/drain regrowth of highlydoped n+GaN layer by MOCVD[J]. Chinese Phys. B, 2014, 23(12): 508512.

[9] Yang W, Mcpherson S A, Mao Z, et al. Singlecrystal GaN pyramids grown on (111)Si substrates by selective lateral overgrowth[J]. J. of Crystal Growth, 1999, 204(3): 270274.

[10] Kawaguchi Y, Honda Y, Matsushima H, et al. Selective area growth of GaN on Si substrate using SiO2 mask, by metalorganic vapor phase epitaxy[J]. Jap. J. of Appl. Phys., 2014, 37(8B): L966L969.

[11] Xiao H P. Electronic properties of disordered bilayer hexagonal boron nitride quantum films[J]. Act. Phys. Sin., 2012, 61(17): 178101.

[12] Srinivasan S, Stevens M, Ponce F A, et al. Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets[J]. Appl. Phys. Lett., 2005, 87(13): 273.

[13] Wchter C, Meyer A, Metzner S, et al. Spectral features in different sized InGaN/GaN micropyramids[J]. Phys. Status Solidi, 2011, 8(7/8): 23872389.

[14] Miyake H, Nakao K, Hiramatsu K. Blue emission from InGaN/GaN hexagonal pyramid structures[J]. Superlattices & Microstructures, 2007, 41(5/6): 341346.

[15] Matsushima H, Yamaguchi M, Hiramatsu K, et al. Submicron fine structure of GaN by metalorganic vapor phase epitaxy (MOVPE) selective area growth (SAG) and buried structure by epitaxial lateral overgrowth (ELO)[J]. J. of Crystal Growth, 1998, 189(11): 7882.

[16] Hiramatsu K, Nishiyama K, Motogaito A, et al. Recent progress in selective area growth and epitaxial lateral overgrowth of Ⅲnitrides: Effects of reactor pressure in MOVPE growth[J]. Phys. Status Solidi, 1999, 176(1): 535543.

[17] Hiramatsu K, Nishiyama K, Onishi M, et al. Fabrication and characterization of low defect density GaN using facetcontrolled epitaxial lateral overgrowth (FACELO)[J]. J. of Crystal Growth, 2000, 221(1/4): 316326.

[18] Jiang Xianzhe, Yang Xuelin,Ji Pin, et al. Structure dependence of magnetic properties for annealed GaMnN films grown by MOCVD[J]. Chinese Phys. Lett., 2014, 31(6): 203206.

[19] Fang Y T, Jiang Y, Deng Z, et al. GaN films grown on Si (111) substrates using a composite buffer with low temperature AlN interlayer[J]. Chinese Phys. Lett., 2014, 31(2): 130133.

[20] Chen Weijie, Han Xiaobiao, Lin Jiali, et al. Migration characterization of Ga and In adatoms on dielectric surface in selective MOVPE[J]. Chinese Phys. B, 2015, 24(11): 525529.

[21] Sasaki T, Kitamura M, Mito I. Selective metalorganic vapor phase epitaxial growth of InGaAsP/InP layers with bandgap energy control in InGaAs / InGaAsP multiplequantum well structures[J]. J. of Crystal Growth, 1993, 132(3/4): 435443.

[22] Sakata Y, Inomoto Y, Komatsu K. Surface migration effect and lateral vaporphase diffusion effect for InGaAsP/InP narrowstripe selective metalorganic vaporphase epitaxy[J]. J. of Crystal Growth, 2000, 208(1/4): 130136.

[23] Nakai K, Ozeki M. Selective metalorganic chemical vapour deposition for GaAs planar technology[J]. J. of Crystal Growth, 1984, 68(1): 200205.

[24] Azoulay R, Bouadma N, Bouley J C, et al. Selective MOCVD epitaxy for optoelectronic devices[J]. J. of Crystal Growth, 1981, 55(1): 229234.

[25] Heinecke H, Brauers A, Grafahrend F, et al. Selective growth of GaAs in the MOMBE and MOCVD systems[J]. J. of Crystal Growth, 1986, 77(1/3): 303309.

[26] 曹峻松, 郑畅达, 全知觉, 等. Si衬底上侧向外延生长GaN的研究[J]. 半导体光电, 2015, 36(4): 569573.

Cao Junsong, Zheng Changda, Quan Zhijue, et al. Study on epitaxial lateral overgrowth of GaN on Si substrate[J]. Semiconductor Optoelectronics, 2015, 36(4): 569573.

杨杭, 邢洁莹, 陈伟杰, 陈杰, 韩小标, 钟昌明, 梁捷智, 黄德佳, 侯雅倩, 吴志盛, 张佰君. 选择区域外延生长中掩模介质表面Ga原子的迁移特性[J]. 半导体光电, 2018, 39(5): 659. YANG Hang, XING Jieying, CHEN Weijie, CHEN Jie, HAN Xiaobiao, ZHONG Changming, LIANG Jiezhi, HUANG Dejia, HOU Yaqian, WU Zhisheng, ZHANG Baijun. Migration Characterization of Ga Adatoms on Dielectric Surface in Selective Area Growth[J]. Semiconductor Optoelectronics, 2018, 39(5): 659.

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