[1] Shahedipour F S,, Ulmer M P.Efficcient GaN photocaathodes for low-leevel ultraviolet signall detection[J]. IEEEE Journal of QQuantum Electronnics, 2002, 38(4): 333-335.

[2] 郭向阳, 常本康, 乔建良, 等. GaN 与GaAs NEA 光电阴极稳定性的比较[J]. 红外技术, 2010, 32(2): 117-120.

    GUO Xiang-yang, CHANG Ben-kang, QIAO Jian-liang, et al. Comparison of Stability of GaN and GaAs Photocathode[J]. Infrared Technology, 2010, 32(2): 117-120.

[3] Du Yujie, Chang Benkang, Fu Xiaoqian, et al. Effects of NEA GaN photocathode performance parameters on quantum efficiency[J]. Optik, 2012, 123(9): 800-803.

[4] 李向阳, 许金通, 汤英文, 等. GaN 基紫外探测器及其研究进展[J]. 红外与激光工程, 2006, 35(3): 276-280.

    LI Xiang-yang, XU Jing-tong, TANG Ying-wen, et al. GaN based ultraviolet detectors and its recent development[J]. Infrared and Laser Engineering, 2006, 35(3): 276-280.

[5] 冯丽萍, 刘正堂. 蓝宝石衬底表面SiO2 薄膜的应力分析[J]. 硅酸盐学报, 2008, 36(2): 206-209.

    FENG Liping, LIU Zhengtang Investigation of the stress of SiO2 films deposited on sapphire substrate[J]. Journal of the Chinese Ceramic Society, 2008, 36(2): 206-209.

[6] Hsueh CH. Thermal stresses in elastic multilayer systems[J]. Thin Solid Films, 2002, 418(2): 182-188.

[7] Cao T, Zhang L, Xiao Z, et al. Enhancement and tenability of fano resonance in symmetric multilayer metamaterials at optical regime[J]. Journal of Physics D: Applied Physics, 2013, 46(39): 395103.

[8] 邵淑英, 范正修, 范瑞瑛, 等. 薄膜应力研究[J].激光与光电子学进展, 2005, 42(1): 22-27.

    SHAO Shu-Ying, FAN Zheng-Xiu, FAN Rui-Ying, et al. A review of study of stress in thin films[J]. Laser & Optronics Progress, 2005, 42(1): 22-27.

[9] 陈为兰. 光学薄膜应力的研究[D]. 杭州: 浙江大学硕士学位论文, 2008.

    CHEN Wei-Lan. Research on stresses in optical films[D]. Hangzhou: Zhejiang University, 2008.

[10] Kinosita K, Maki K, Nakamizo K, et al. Stress in vacuum deposited fims of silver[J]. Japanese Journal of Applied Physics, 1967, 6(1): 42-50.

[11] 刘星, 朱嘉琦, 韩杰才. 多层膜结构热应力计算[J]. 力学与实践, 2014, 36(4): 453-456.

    LIU Xing, ZHU Jia-Qi, HAN Jie-Cai. Thermal stresses in elastic multilayer systems[J]. Mechanics in Engineering, 2014, 36(4): 453-456.

[12] Townsend PH, Barnett DM, Brunner TA. Elastic relationships in layered composite media with approximation for the case of thin films on a thick substrate[J]. Journal of Applied Physics, 1987, 62(11): 4438-4444.

[13] 李英爱. 氮化铝薄膜的制备及场发射性质[D]. 长春: 吉林大学, 2004.

    LI Ying-Ai, Preparation and field Emission Characteristics of AIN thin films[D]. Changchun: Jilin University, 2004.

[14] 邢志刚. 图形蓝宝石衬底生长GaN 外延薄膜的微结构研究[D]. 北京: 中国科学院物理研究所, 2007.

    XING Zhigang. Study on micro-structure of GaN films epitaxially grown on patterned sapphire substrate[D]. Beijing: Institute of Physics CAS, 2007.

[15] 吴靓臻, 唐吉玉, 马远新, 等. SiO2 薄膜热应力模拟计算[J]. 华南师范大学学报: 自然科学版, 2009, 1(1): 52-55.

    WU Liang-Zhen, TANGJie-Yu, MAYuan-Xin, et al. Simulation of thermal stress in SiO2 thin film[J]. Journal of South China Normal University: Natural Science edition, 2009,1(1): 52-55

[16] 段焕涛. 基于高温AlN 成核层的GaN 基异质结构材料生长研究[D]. 西安: 西安电子科技大学, 2011.

    Duan Huantao. Growth of GaN-based heterostructure materialson High TcmPerature AIN Nucleation Layer[D]. Xi’an: Xidian University, 2011.

[17] 景微娜. 衬底处理对MOCVD 外延生长GaN 薄膜性能的影响[D]. 天津: 河北工业大学,2008.

    Jing Weina Effect of sapphire substrate etching on the quality of gallium nitride epilayers[D]. Tianjin: Hebei University of technology, 2008.