太赫兹科学与电子信息学报, 2017, 15 (2): 313, 网络出版: 2017-06-06  

双栅无结晶体管阈值电压模型

Threshold voltage model for junctionless double-gate transistors
杨可萌 1,2,*李悦 1,2郭羽涵 1,2王超 1,2郭宇锋 1,2刘陈 1,2
作者单位
1 南京邮电大学 a.电子科学与工程学院
2 b.江苏省射频集成与微组装工程实验室,江苏南京 210023
引用该论文

杨可萌, 李悦, 郭羽涵, 王超, 郭宇锋, 刘陈. 双栅无结晶体管阈值电压模型[J]. 太赫兹科学与电子信息学报, 2017, 15(2): 313.

YANG Kemeng, LI Yue, GUO Yuhan, WANG Chao, GUO Yufeng, LIU Chen. Threshold voltage model for junctionless double-gate transistors[J]. Journal of terahertz science and electronic information technology, 2017, 15(2): 313.

参考文献

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杨可萌, 李悦, 郭羽涵, 王超, 郭宇锋, 刘陈. 双栅无结晶体管阈值电压模型[J]. 太赫兹科学与电子信息学报, 2017, 15(2): 313. YANG Kemeng, LI Yue, GUO Yuhan, WANG Chao, GUO Yufeng, LIU Chen. Threshold voltage model for junctionless double-gate transistors[J]. Journal of terahertz science and electronic information technology, 2017, 15(2): 313.

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