Opto-Electronic Advances, 2019, 2 (12): 12190014, Published Online: Jan. 8, 2020  

Polariton lasing in InGaN quantum wells at room temperature

Author Affiliations
1 Department of Electronic Engineering, School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen 361005, China
2 Surface Physics Laboratory, Department of Physics, Fudan University, Shanghai 200433, China
3 School of Physical Science and Technology, Guangxi University, Nanning 530004, China
Basic Information
DOI: 10.29026/oea.2019.190014
中图分类号: --
栏目: Original Article
项目基金: --
收稿日期: Apr. 23, 2019
修改稿日期: --
网络出版日期: Jan. 8, 2020
通讯作者: Hao Long (bzhang@xmu.edu.cn)
备注: --

Jinzhao Wu, Hao Long, Xiaoling Shi, Song Luo, Zhanghai Chen, Zhechuan Feng, Leiying Ying, Zhiwei Zheng, Baoping Zhang. Polariton lasing in InGaN quantum wells at room temperature[J]. Opto-Electronic Advances, 2019, 2(12): 12190014.

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