Polariton lasing in InGaN quantum wells at room temperature

Jinzhao Wu; Hao Long; Xiaoling Shi; Song Luo; Zhanghai Chen; Zhechuan Feng; Leiying Ying; Zhiwei Zheng; Baoping Zhang

doi:doi:10.29026/oea.2019.190014

Opto-Electronic Advances, 2019, 2 (12): 12190014, Published Online: Jan. 8, 2020

Polariton lasing in InGaN quantum wells at room temperature

Jinzhao Wu ¹Hao Long ^1,*Xiaoling Shi ¹Song Luo ²Zhanghai Chen ²Zhechuan Feng ³Leiying Ying ¹Zhiwei Zheng ¹Baoping Zhang ¹

Author Affiliations

¹ Department of Electronic Engineering, School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen 361005, China

² Surface Physics Laboratory, Department of Physics, Fudan University, Shanghai 200433, China

³ School of Physical Science and Technology, Guangxi University, Nanning 530004, China

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Jinzhao Wu, Hao Long, Xiaoling Shi, Song Luo, Zhanghai Chen, Zhechuan Feng, Leiying Ying, Zhiwei Zheng, Baoping Zhang. Polariton lasing in InGaN quantum wells at room temperature[J]. Opto-Electronic Advances, 2019, 2(12): 12190014.

Polariton lasing in InGaN quantum wells at room temperature

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