Polariton lasing in InGaN quantum wells at room temperature

Jinzhao Wu; Hao Long; Xiaoling Shi; Song Luo; Zhanghai Chen; Zhechuan Feng; Leiying Ying; Zhiwei Zheng; Baoping Zhang

doi:doi:10.29026/oea.2019.190014

Opto-Electronic Advances, 2019, 2 (12): 12190014, Published Online: Jan. 8, 2020

Polariton lasing in InGaN quantum wells at room temperature

Jinzhao Wu ¹Hao Long ^1,*Xiaoling Shi ¹Song Luo ²Zhanghai Chen ²Zhechuan Feng ³Leiying Ying ¹Zhiwei Zheng ¹Baoping Zhang ¹

Author Affiliations

¹ Department of Electronic Engineering, School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen 361005, China

² Surface Physics Laboratory, Department of Physics, Fudan University, Shanghai 200433, China

³ School of Physical Science and Technology, Guangxi University, Nanning 530004, China

Suppl. Mat.

Jinzhao Wu, Hao Long, Xiaoling Shi, Song Luo, Zhanghai Chen, Zhechuan Feng, Leiying Ying, Zhiwei Zheng, Baoping Zhang. Polariton lasing in InGaN quantum wells at room temperature[J]. Opto-Electronic Advances, 2019, 2(12): 12190014.