Polariton lasing in InGaN quantum wells at room temperature

Jinzhao Wu; Hao Long; Xiaoling Shi; Song Luo; Zhanghai Chen; Zhechuan Feng; Leiying Ying; Zhiwei Zheng; Baoping Zhang

doi:doi:10.29026/oea.2019.190014

Opto-Electronic Advances, 2019, 2 (12): 12190014, Published Online: Jan. 8, 2020

Polariton lasing in InGaN quantum wells at room temperature

Jinzhao Wu ¹Hao Long ^1,*Xiaoling Shi ¹Song Luo ²Zhanghai Chen ²Zhechuan Feng ³Leiying Ying ¹Zhiwei Zheng ¹Baoping Zhang ¹

Author Affiliations

¹ Department of Electronic Engineering, School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen 361005, China

² Surface Physics Laboratory, Department of Physics, Fudan University, Shanghai 200433, China

³ School of Physical Science and Technology, Guangxi University, Nanning 530004, China

Figures & Tables

Fig. 1. (a) Sample structure of InGaN/GaN MQWs microcavity for strong coupling. (b) The optical field in the microcavity with MQWs placed on the antinode. (c) and (d) Photoluminescence spectrums of bare wafer at 15 K and 300 K.

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Fig. 2. (a) Schematic of angle-resolved micro-PL setup. (b) Schematic of angle-resolved PL Fourier image setup. (c) The angle resolved micro-PL of positive detuning sample. (d) LPB and UPB dispersion curves fitted by coupled oscillator model. (e) The angle resolved micro-PL Fourier image of negative detuning sample.

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Fig. 3. (a) The dependence of luminous intensity, peak position and half-width of LPB on the excitation power with double nonlinear regimes. (b) Enlarged polariton lasing region with linear coordinates. (T₁ and T₂ denote the polariton lasing threshold and photonic lasing threshold)

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Fig. 4. The k-space mapping of exciton polaritons under different excitation power. (a) and (b) polariton (T₁) and photonic (T₂) lasing thresholds respectively.

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Jinzhao Wu, Hao Long, Xiaoling Shi, Song Luo, Zhanghai Chen, Zhechuan Feng, Leiying Ying, Zhiwei Zheng, Baoping Zhang. Polariton lasing in InGaN quantum wells at room temperature[J]. Opto-Electronic Advances, 2019, 2(12): 12190014.

Polariton lasing in InGaN quantum wells at room temperature

Fig. 1. (a) Sample structure of InGaN/GaN MQWs microcavity for strong coupling. (b) The optical field in the microcavity with MQWs placed on the antinode. (c) and (d) Photoluminescence spectrums of bare wafer at 15 K and 300 K.

Fig. 3. (a) The dependence of luminous intensity, peak position and half-width of LPB on the excitation power with double nonlinear regimes. (b) Enlarged polariton lasing region with linear coordinates. (T₁ and T₂ denote the polariton lasing threshold and photonic lasing threshold)

Fig. 4. The k-space mapping of exciton polaritons under different excitation power. (a) and (b) polariton (T₁) and photonic (T₂) lasing thresholds respectively.

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Polariton lasing in InGaN quantum wells at room temperature

Fig. 1. (a) Sample structure of InGaN/GaN MQWs microcavity for strong coupling. (b) The optical field in the microcavity with MQWs placed on the antinode. (c) and (d) Photoluminescence spectrums of bare wafer at 15 K and 300 K.

Fig. 3. (a) The dependence of luminous intensity, peak position and half-width of LPB on the excitation power with double nonlinear regimes. (b) Enlarged polariton lasing region with linear coordinates. (T1 and T2 denote the polariton lasing threshold and photonic lasing threshold)

Fig. 4. The k-space mapping of exciton polaritons under different excitation power. (a) and (b) polariton (T1) and photonic (T2) lasing thresholds respectively.

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Fig. 3. (a) The dependence of luminous intensity, peak position and half-width of LPB on the excitation power with double nonlinear regimes. (b) Enlarged polariton lasing region with linear coordinates. (T₁ and T₂ denote the polariton lasing threshold and photonic lasing threshold)

Fig. 4. The k-space mapping of exciton polaritons under different excitation power. (a) and (b) polariton (T₁) and photonic (T₂) lasing thresholds respectively.