InSe/Se范德瓦尔斯异质结的可控制备及其高响应度广光谱光电探测器
陈洪宇, 尚慧明, 戴明金, 王月飞, 李炳生, 胡平安. InSe/Se范德瓦尔斯异质结的可控制备及其高响应度广光谱光电探测器[J]. 发光学报, 2019, 40(11): 1409.
CHEN Hong-yu, SHANG Hui-ming, DAI Ming-jin, WANG Yue-fei, LI Bing-sheng, HU Ping-an. Controlled Fabrication InSe/Se Van Der Waals Heterojunction for High Responsivity Broadband Photodetectors[J]. Chinese Journal of Luminescence, 2019, 40(11): 1409.
[1] FANG H H,HU W D. Photogating in low dimensional photodetectors ［J］. Adv. Sci., 2017,4(12):1700323-1-17.
[2] JIANG Y,ZHANG W J,JIE J S,et al.. Photoresponse properties of CdSe single-nanoribbon photodetectors ［J］. Adv. Funct. Mater., 2007,17(11):1795-1800.
[3] RAZEGHI M,ROGALSKI A. Semiconductor ultraviolet detectors ［J］. J. Appl. Phys., 1996,79(10):7433-7473.
[4] CHEN H Y,LIU H,ZHANG Z M,et al.. Nanostructured photodetectors:from ultraviolet to terahertz ［J］. Adv. Mater., 2016,28(3):403-433.
[5] CHEN H Y,LIU K W,HU L F,et al.. New concept ultraviolet photodetectors ［J］. Mater. Today,2015,18(9):493-502.
[6] KONSTANTATOS G,BADIOLI M,GAUDREAU L,et al.. Hybrid graphene-quantum dot phototransistors with ultrahigh gain ［J］. Nat. Nanotechnol., 2012,7(6):363-368.
[7] LUO W J,WENG Q C,LONG M S,et al.. Room-temperature single-photon detector based on single nanowire ［J］. Nano Lett., 2018,18(9):5439-5445.
[8] LI L,AUER E,LIAO M Y,et al.. Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts ［J］. Nanoscale, 2011,3(3):1120-1126.
[9] PENG L,HU L F,FANG X S. Low-dimensional nanostructure ultraviolet photodetectors ［J］. Adv. Mater., 2013,25(37):5321-5328.
[10] ZHENG W,FENG W,ZHANG X,et al.. Anisotropic growth of nonlayered CdS on MoS2 Monolayer for functional vertical heterostructures ［J］. Adv. Funct. Mater., 2016,26(16):2648-2654.
[11] ISLAND J O,BLANTER S I,BUSCEMA M,et al.. Gate controlled photocurrent generation mechanisms in high-gain In2Se3 phototransistors ［J］. Nano Lett., 2015,15(12):7853-7858.
[12] ZHOU C J,RAJU S,LI B,et al.. Self-driven metal-semiconductor-metal WSe2 photodetector with asymmetric contact geometries ［J］. Adv. Funct. Mater., 2018,28(45):1802954.
[13] XUE H,WANG Y D,DAI Y Y,et al.. A MoSe2/WSe2 heterojunction-based photodetector at telecommunication wavelengths ［J］. Adv. Funct. Mater., 2018,28(47):1804388.
[14] FENG W,JIN Z,YUAN J,et al.. A fast and zero-biased photodetector based on GaTe-InSe vertical 2D p-n heterojunction ［J］. 2D Mater., 2018,5(2):025008-1-14.
[15] ZHANG K N,ZHANG T N,CHENG G H,et al.. Interlayer transition and infrared photodetection in atomically thin type-Ⅱ MoTe2/MoS2 van der Waals heterostructures ［J］. ACS Nano, 2016,10(3):3852-3858.
[16] NOVOSELOV K S,GEIM A K,MOROZOV S V,et al.. Electric field effect in atomically thin carbon films ［J］. Science, 2004,306(5969):666-669.
[17] GENG D C,YANG H Y. Recent advances in growth of novel 2D materials:beyond graphene and transition metal dichalcogenides ［J］. Adv. Mater., 2018,30(45):1800865.
[18] CHEN X,LIN Z Z,JU M. Controllable band alignment transition in InSe-MoS2 van der Waals heterostructure ［J］. Phys. Status Solidi, 2018,12(7):1800102.
[19] HU K,CHEN H Y,JIANG M M,et al.. Broadband photoresponse enhancement of a high-performance t-Se microtube photodetector by plasmonic metallic nanoparticles ［J］. Adv. Funct. Mater., 2016,26(36):6641-6648.
[20] DAI M J,CHEN H Y,FENG R,et al.. A dual-band multilayer InSe self-powered photodetector with high performance induced by surface plasmon resonance and asymmetric Schottky junction ［J］. ACS Nano, 2018,12(8):8739-8747.
[21] YU P P,HU K,CHEN H Y,et al.. Novel p-p heterojunctions self-powered broadband photodetectors with ultrafast speed and high responsivity ［J］. Adv. Funct. Mater., 2017,27(38):1703166-1-10.
[22] HUANG W J,GAN L,LI H Q,et al.. Phase-engineered growth of ultrathin InSe flakes by chemical vapor deposition for high-efficiency second harmonic generation ［J］. Chem. Eur. J., 2018,24(58):15678-15684.
[23] YANG Z B,JIE W J,MAK C H,et al.. Wafer-scale synthesis of high-quality semiconducting two-dimensional layered InSe with broadband photoresponse ［J］. ACS Nano, 2017,11(4):4225-4236.
[24] WANG G H,LI L,FAN W H,et al.. Interlayer coupling induced infrared response in WS2/MoS2 heterostructures enhanced by surface plasmon resonance ［J］. Adv. Funct. Mater., 2018,28(22):1800339.
[25] LUO W G,CAO Y F,HU P A,et al.. Gate tuning of high-performance InSe-based photodetectors using graphene electrodes ［J］. Adv. Opt. Mater., 2015,3(10):1418-1423.
[26] MANDERS J R,LAI T H,AN Y B,et al.. Low-noise multispectral photodetectors made from all solution-processed inorganic semiconductors ［J］. Adv. Funct. Mater., 2014,24(45):7205-7210.
[27] KONG W Y,WU G A,WANG K Y,et al.. Graphene-β-Ga2O3 heterojunction for highly sensitive deep UV photodetector application ［J］. Adv. Mater., 2016,28(48):10725-10731.
[28] CHEN H Y,LIU K W,CHEN X,et al.. Realization of a self-powered ZnO MSM UV photodetector with high responsivity using an asymmetric pair of Au electrodes ［J］. J. Mater. Chem. C, 2014,2(45):9689-9694.
[29] ZHENG L X,YU P P,HU K,et al.. Scalable-production,self-powered TiO2 nanowell-organic hybrid UV photodetectors with tunable performances ［J］. ACS Appl. Mater. Interfaces, 2016,8(49):33924-33932.
陈洪宇, 尚慧明, 戴明金, 王月飞, 李炳生, 胡平安. InSe/Se范德瓦尔斯异质结的可控制备及其高响应度广光谱光电探测器[J]. 发光学报, 2019, 40(11): 1409. CHEN Hong-yu, SHANG Hui-ming, DAI Ming-jin, WANG Yue-fei, LI Bing-sheng, HU Ping-an. Controlled Fabrication InSe/Se Van Der Waals Heterojunction for High Responsivity Broadband Photodetectors[J]. Chinese Journal of Luminescence, 2019, 40(11): 1409.
PDF全文
