InSe/Se范德瓦尔斯异质结的可控制备及其高响应度广光谱光电探测器

为了实现紫外-可见波段的高响应度/低成本的广光谱光电探测,我们制备了基于一维p型Se微米线与二维n型InSe纳米片的混维范德瓦尔斯异质结广光谱探测器。得益于Se微米线与二维层状结构InSe纳米片的高结晶质量, 该器件在紫外-可见光广光谱范围都具有非常高的响应度, 该器件的响应截止边为700 nm。值得指出的是, 该器件在-5 V的偏压下, 对460 nm的光源响应度可以达到108 mA/W,该数值比原来的Se探测器高了800%。这项研究有利于拓展我们对范德瓦尔斯异质结的认识, 也为今后制备高性能的低维光电探测器提供了一种新的途径。

Abstract

To realize photodetection ranging from UV to visible region with high responsivity and low cost, a novel broadband photodetector based on mixed-dimensional van der Waals (vdW) heterojunction comprising a two dimensional (2D) n-type InSe nanosheet and a p-type Se microwire is proposed. Benefiting from the high crystal micrometer-sized Se microwire and two dimensional InSe nanosheet, the device exhibits a high responsivity ranging from UV to visible region with a sharp cutoff at 700 nm. It is worth pointing out that the responsivity of the device could reach up to 108 mA/W at 460 nm at -5 V. The responsivity is 800% larger than that of pristine Se device. These investigations will broaden our fundamental knowledge of vdW heterostructures, which would open additional opportunities for fabricating low dimensional photodetectors with high performance.

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陈洪宇, 尚慧明, 戴明金, 王月飞, 李炳生, 胡平安. InSe/Se范德瓦尔斯异质结的可控制备及其高响应度广光谱光电探测器[J]. 发光学报, 2019, 40(11): 1409. CHEN Hong-yu, SHANG Hui-ming, DAI Ming-jin, WANG Yue-fei, LI Bing-sheng, HU Ping-an. Controlled Fabrication InSe/Se Van Der Waals Heterojunction for High Responsivity Broadband Photodetectors[J]. Chinese Journal of Luminescence, 2019, 40(11): 1409.

InSe/Se范德瓦尔斯异质结的可控制备及其高响应度广光谱光电探测器

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