半导体光电, 2019, 40 (4): 480, 网络出版: 2019-09-20
非晶铟镓锌氧化物薄膜晶体管的制备及其光敏特性研究
Fabrication and Photosensitive Properties of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors
引用该论文
陆清茹, 李帆, 黄晓东. 非晶铟镓锌氧化物薄膜晶体管的制备及其光敏特性研究[J]. 半导体光电, 2019, 40(4): 480.
LU Qingru, LI Fan, HUANG Xiaodong. Fabrication and Photosensitive Properties of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors[J]. Semiconductor Optoelectronics, 2019, 40(4): 480.
陆清茹, 李帆, 黄晓东. 非晶铟镓锌氧化物薄膜晶体管的制备及其光敏特性研究[J]. 半导体光电, 2019, 40(4): 480. LU Qingru, LI Fan, HUANG Xiaodong. Fabrication and Photosensitive Properties of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors[J]. Semiconductor Optoelectronics, 2019, 40(4): 480.