非晶铟镓锌氧化物薄膜晶体管的制备及其光敏特性研究
[1] 方庆清. 基于SmCo基永磁薄膜构建的MEMS器件中的几个关键技术问题[C]// 中国功能新材料学术论坛暨全国电磁材料及器件学术会议, 2012.
Fang Qingqing. Several key technical issues in the construction of EMS devices based on SmCo-based permanent magnet thin films[C]// China Academic Forum on Functional New Materials and National Academic Conf. on Electromagnetic Materials and Devices, 2012.
[2] Lien A, Lo C C, Chiang C L, et al. Thermal stability of amorphous InGaZnO thin-film transistors with different oxygen-contained active layers[J]. J. of Display Technol., 2015, 11(7): 610-614.
[3] Ha T J, Cho W J, Chung H B, et al. A comparison of photo-induced hysteresis between hydrogenated amorphous silicon and amorphous IGZO thin-film transistors[J]. J. Nanosci. Nanotechnol., 2015, 15(9): 6695-6698.
[4] Park J C, Cho I T, Cho E S, et al. Comparative study of ZrO2 and HfO2 as a high-k dielectric for amorphous InGaZnO thin film transistors[J]. J. of Nanoelectronics & Optoelectronics, 2014, 9(1): 67-70.
[5] Hanh N H, Jang K, Yi J. Fabrication of InGaZnO nonvolatile memory devices at low temperature of 150℃ for applications in flexible memory displays and transparency coating on plastic substrates[J]. J. of Nanoscience & Nanotechnol., 2016, 16(5): 4860.
[6] Tsay C Y, Yan T Y. Solution processed amorphous InGaZnO semiconductor thin films and transistors[J]. J. of Physics & Chemistry of Solids, 2014, 75(1): 142-147.
[7] Chung J M, Zhang X, Shang F, et al. Enhancement of a-IGZO TFT device performance using a clean interface process via etch-stopper nano-layers[J]. Nanoscale Research Lett., 2018, 13(1): 164.
[8] Hsieh H H, Wu C H, Chien C W, et al. Influence of channel-deposition conditions and gate insulators on performance and stability of top-gate IGZO transparent thin-film transistors[J]. J. of the Society for Information Display, 2012, 18(10): 796-801.
[9] Oh H, Yoon S M, Ryu M K, et al. Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor[J]. Appl. Phys. Lett., 2011, 98(3): 263513.
[10] Chen T C, Chang T C, Hsieh T Y, et al. Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition[J]. Appl. Phys. Lett., 2010, 97(19): 192103.
[11] 崔兴美, 陈 笋, 丁士进. 非晶In-Ga-Zn-O沟道薄膜晶体管存储器研究[J]. 半导体技术, 2013, 38(7): 481-486.
Cui Xingmei, Chen Sun, Ding Shijin. Research on amorphous In-Ga-Zn-O channel thin film transistor memory[J]. Semiconductor Technol., 2013, 38(7): 481-486.
[12] 刘恩科, 朱秉升, 罗晋生. 半导体物理学[M]. 第4版. 北京: 国防工业出版社, 2008.
Liu Enke, Zhu Bingsheng, Luo Jinsheng. Semiconductor Physics[M]. 4th Edi. Beijing: National Defence Industry Press, 2008.
[13] Pierrent R F. Semiconductor Device Physics[M]. Reading, MA: AddisonWesley,1996.
[14] Hamilton M C, Martin S, Kanicki J. Thin-film organic polymer phototransistors[J]. IEEE Trans. on Electron. Devices, 2004, 51(6): 877-885.
陆清茹, 李帆, 黄晓东. 非晶铟镓锌氧化物薄膜晶体管的制备及其光敏特性研究[J]. 半导体光电, 2019, 40(4): 480. LU Qingru, LI Fan, HUANG Xiaodong. Fabrication and Photosensitive Properties of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors[J]. Semiconductor Optoelectronics, 2019, 40(4): 480.