半导体光电, 2012, 33 (4): 500, 网络出版: 2012-09-04  

磁控溅射纳米VO2(B相)热敏薄膜的制备

Preparation and Characterization of Thermal Sensitive VO2(B Phase) Films by Magnetron Sputtering
作者单位
1 电子科技大学 光电信息学院, 成都 610054
2 武汉国家光电实验室, 武汉 430074
摘要
利用磁控反应溅射镀膜方法在低温(250℃)条件下制备了主要成分为B相亚稳态二氧化钒(VO2)的薄膜材料。电学性能测试表明: 室温下该薄膜的方块电阻为50kΩ左右, 电阻温度系数为-2.4%/K, 可以作为非致冷红外微测热辐射热计的热敏材料。
Abstract
VO2(B) thin films were fabricated by magnetron sputtering under low temperature of 250℃. XRD test shows the thin films contain VO2 (B) mostly and some V2O5.The sheet resistance of the films was detected to be about 50kΩ under room temperature and the temperature coefficient of resistance (TCR) is near -0.024/, showing the films can be used as thermal sensitive material for uncooled IR microbolometers.
参考文献

[1] Wood R A.A high performance infrared imaging with monolithic silicon focal planes operating at room temperature[C]/ Digest of International Electron Devices Meeting, 1993: 175177.

[2] Tanaka A,Mastsumoto S, Tsukamoto N, et al. Infrared focal plane array incorporating silicon IC process compatible bolometer[J]. IEEE Trans. on Electron. Devices,1996,44(11): 18841850. [3]Murphy D F,Ray M, Wyles R, et al. High sensitivity(25μm pitch) microbolometer FPAs[J]. Proc. SPIE,2011,4369: 147159.

[3] Hay K A,Deusen D V. Uncooled focal plane array detector development at infrared vision technology corp[J]. Proc.SPIE, 2005,5783: 514523.

[4] Tidrow M Z,Clark W W, Tipton W, et al. Uncooled infrared detectors and focal plane arrays[J], Proc. SPIE, 1998,3553: 178187.

[5] Chen C H,Yi X J, Xiong B F. Infrared responsivity of uncooled VO2based thin films bolometer[J]. Acta Phys.Sin.,2001,50(3): 450452.

[6] Kumar R T R,Karunagaran B, Mangalaraj D, et al. Study of a pulsed laser deposited vanadium oxide based microbolometer array[J]. Smart Mater. Struct., 2003,12(2): 188.

[7] Sedky S,Fiorini P, Baert K, et al. Characterization and optimization of infrared SiGe bolometers[J]. IEEE Trans.on Electron. Devices,1999,46(4): 675682.

[8] Almasri M,Butler D P, ElikButler Z C. Selfsupporting uncooled infrared microbolometers with lowthermal mass[J]. J. Microelectromech. System,2001,10(3): 469476.

[9] Tsang C,Manthiram A. Synthesis of nanocrystalline VO2 and Its Electrochemical Behavior in Lithium Batteries[J]. J. Electrochem. Soc.,1997,144(2): 520524.

何少伟, 陈鹏杰, 胡庆, 董翔, 蒋亚东, 赖建军, 王宏臣, 黄光. 磁控溅射纳米VO2(B相)热敏薄膜的制备[J]. 半导体光电, 2012, 33(4): 500. HE Shaowei, CHEN Pengjie, HU Qing, DONG Xiang, JIANG Yadong, LAI Jianjun, WANG Hongchen, HUANG Guang. Preparation and Characterization of Thermal Sensitive VO2(B Phase) Films by Magnetron Sputtering[J]. Semiconductor Optoelectronics, 2012, 33(4): 500.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!