半导体光电, 2018, 39 (1): 6, 网络出版: 2018-08-30
采用多级变速法生长AlGaAs电流扩展层的850nm红外发光二极管
850nm Infrared Light-emitting Diodes Composed of AlGaAs Current Spreading Layers Grown by Multi-step Variable Growth Rate Method
基本信息
DOI: | 10.16818/j.issn1001-5868.2018.01.002 |
中图分类号: | TN312.8 |
栏目: | 光电器件 |
项目基金: | -- |
收稿日期: | 2017-07-19 |
修改稿日期: | -- |
网络出版日期: | 2018-08-30 |
通讯作者: | 陈凯轩 (ckx@changelight.com.cn) |
备注: | -- |
陈凯轩. 采用多级变速法生长AlGaAs电流扩展层的850nm红外发光二极管[J]. 半导体光电, 2018, 39(1): 6. CHEN Kaixuan. 850nm Infrared Light-emitting Diodes Composed of AlGaAs Current Spreading Layers Grown by Multi-step Variable Growth Rate Method[J]. Semiconductor Optoelectronics, 2018, 39(1): 6.