采用多级变速法生长AlGaAs电流扩展层的850nm红外发光二极管

陈凯轩

doi:doi:10.16818/j.issn1001-5868.2018.01.002

半导体光电, 2018, 39 (1): 6, 网络出版: 2018-08-30

采用多级变速法生长AlGaAs电流扩展层的850nm红外发光二极管

850nm Infrared Light-emitting Diodes Composed of AlGaAs Current Spreading Layers Grown by Multi-step Variable Growth Rate Method

论文大纲

陈凯轩 ^*

作者单位

厦门乾照光电股份有限公司, 福建厦门 361101

多级变速法电流扩展层发光二极管金属有机化学气相外延 multi-step variable growth rate method current-spreading layer LED MOVPE

摘要

对采用多级变速法生长AlGaAs电流扩展层的850nm红外发光二极管进行了研究。研究发现, 采用多级变速法生长n型Al0.25Ga0.75As电流扩展层有助于改善外延层表面形貌和后续外延层的晶体质量, 从而减小850nm红外发光二极管的漏电流及串联电阻。此外, 采用多级变速法生长n型Al0.25Ga0.75As电流扩展层还可以避免在多量子阱(MQW)有源区中形成非辐射复合中心, 从而提高850nm红外发光二极管的亮度和寿命。

Abstract

850nm infrared light-emitting diodes (IR LEDs) composed of AlGaAs current spreading layers grown by multi-step variable growth rate method were investigated. It is found that the multi-step variable growth rate method can improve the surface morphology and the crystalline quality of the n-type Al0.25Ga0.75As current spreading layer and the epi-layers on top of it. Thus the leakage current and the series resistance of the 850nm IR LEDs can be reduced. Furthermore, the generation of non-radiative recombination centers within MQW active region can be avoided by using the multi-step variable growth rate method to grow n-type Al0.25Ga0.75As current spreading layer. Thus the light output power and the lifetime of the 850nm IR LEDs can also be increased.

参考文献

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陈凯轩. 采用多级变速法生长AlGaAs电流扩展层的850nm红外发光二极管[J]. 半导体光电, 2018, 39(1): 6. CHEN Kaixuan. 850nm Infrared Light-emitting Diodes Composed of AlGaAs Current Spreading Layers Grown by Multi-step Variable Growth Rate Method[J]. Semiconductor Optoelectronics, 2018, 39(1): 6.

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