半导体光电, 2018, 39 (1): 6, 网络出版: 2018-08-30
采用多级变速法生长AlGaAs电流扩展层的850nm红外发光二极管
850nm Infrared Light-emitting Diodes Composed of AlGaAs Current Spreading Layers Grown by Multi-step Variable Growth Rate Method
图 & 表
陈凯轩. 采用多级变速法生长AlGaAs电流扩展层的850nm红外发光二极管[J]. 半导体光电, 2018, 39(1): 6. CHEN Kaixuan. 850nm Infrared Light-emitting Diodes Composed of AlGaAs Current Spreading Layers Grown by Multi-step Variable Growth Rate Method[J]. Semiconductor Optoelectronics, 2018, 39(1): 6.