采用多级变速法生长AlGaAs电流扩展层的850nm红外发光二极管

陈凯轩

doi:doi:10.16818/j.issn1001-5868.2018.01.002

半导体光电, 2018, 39 (1): 6, 网络出版: 2018-08-30

采用多级变速法生长AlGaAs电流扩展层的850nm红外发光二极管

850nm Infrared Light-emitting Diodes Composed of AlGaAs Current Spreading Layers Grown by Multi-step Variable Growth Rate Method

陈凯轩 ^*

作者单位

厦门乾照光电股份有限公司, 福建厦门 361101

补充材料

陈凯轩. 采用多级变速法生长AlGaAs电流扩展层的850nm红外发光二极管[J]. 半导体光电, 2018, 39(1): 6. CHEN Kaixuan. 850nm Infrared Light-emitting Diodes Composed of AlGaAs Current Spreading Layers Grown by Multi-step Variable Growth Rate Method[J]. Semiconductor Optoelectronics, 2018, 39(1): 6.