采用多级变速法生长AlGaAs电流扩展层的850nm红外发光二极管
陈凯轩. 采用多级变速法生长AlGaAs电流扩展层的850nm红外发光二极管[J]. 半导体光电, 2018, 39(1): 6.
CHEN Kaixuan. 850nm Infrared Light-emitting Diodes Composed of AlGaAs Current Spreading Layers Grown by Multi-step Variable Growth Rate Method[J]. Semiconductor Optoelectronics, 2018, 39(1): 6.
[1] Hiroyuki K, Kuniaki I, Yoshisumi K, et al. Development of super high brightness infrared LEDs[J]. SEI Technical Rev., 2011, 72(11): 86-89.
[2] 黄建民, 周 力. 监控用850nm大功率红外芯片及其产业化[C]// 全国LED产业研讨与学术会议, 2010.
Huang Jianmin, Zhou Li. 850nm high-power monitoring infrared chip and its industrialization[C]// National LED Industry Seminar and Academic Conf., 2010.
[3] Illek S, Jung C, Windisch R, et al. High power LEDs for visible and infrared emission[J]. Proc. of SPIE, 2006, 6134: 613401-1-614401-9.
[4] Bockstaele R,Derluyn J, Sys C, et al. Realisation of highly efficient 850nm top emitting resonant cavity light emitting diodes[J]. Electron. Lett., 1999, 35(18): 1564-1565.
[5] Windisch R, Heremans P, Potemans J, et al. 31% absolute external quantum efficiency 850-nm LEDs and their modulation behavior[C]// Inter. Electron Devices Meeting, 1998: 1026-1028.
[6] Schubert E F. Light-Emitting Diodes[M]. 2nd Edition. New York: Cambridge University Press, 2006: 127-132.
[7] 陈凯轩. 具有渐变式折射率分布布拉格反射层的发光二极管[J]. 固体电子学研究与进展, 2013, 33(4): 355-358.
Chen Kaixuan. Light-emitting diodes with graded refractive index distributed Bragg reflectors[J]. Research & Progress of Solid State Electron., 2013, 33(4): 355-358.
[8] 白继峰, 高 欣, 薄报学, 等. 湿法表面粗化提高倒装AlGaInP LED外量子效率[J]. 半导体光电, 2012, 33(2): 188-190.
[9] Chen K X, Dai Q, Lee W, et al. Effect of dislocations on electrical and optical properties of n-type Al0.34Ga0.66N[J]. Appl. Phys. Lett., 2008, 93(19): 192108-1-192108-3.
陈凯轩. 采用多级变速法生长AlGaAs电流扩展层的850nm红外发光二极管[J]. 半导体光电, 2018, 39(1): 6. CHEN Kaixuan. 850nm Infrared Light-emitting Diodes Composed of AlGaAs Current Spreading Layers Grown by Multi-step Variable Growth Rate Method[J]. Semiconductor Optoelectronics, 2018, 39(1): 6.