液相外延制备的InAs0.94Sb0.06薄膜的光学性质
[1] VENTER A, SHAMBA P, BOTHA L, et al. Growth and electrical characterization of Zn-doped InAs and InAs1 xSbx [J]. Thin Solid Films, 2009, 517:4468-4473.
[2] LAL R K, CHAKRABARTI P. A comparison of dominant recombination mechanisms in n-type InAsSb materials[J]. Progress in Crystal Growth and Characterization of Materials, 2006, 52:33-39.
[3] HIROYUKI M, SUZUKI R, AMANO H, et al. Sb surface segregation effect on the phase separation of MBE grown InAsSb[J]. Journal of Crystal Growth, 2002, 237-239:1519-1524.
[4] SARNEY W L, SVENSSON S P, HIER H, et al, Structural and luminescent properties of bulk InAsSb[J]. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2012, 30:02B105.
[5] SVENSSON S P, SARNEY W L, HIER H, et al. Band gap of InAs1-xSbx with native lattice constant[J]. Physical Review B, 2012, 86:245205.
[6] SUN C H, WANG Q W, QIU F, et al. Single crystalline InAsxSb1-x films with cut-off wavelength of 7–8μm grown on (100) InSb substrates by liquid phase epitaxy[J]. Journal of Alloys and Compounds, 2012, 535:39-43.
[7] S IK J, SCHUBERT M, LEIBIGER G, et al. Near-band-gap optical functions spectra and band-gap energies of GaNAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry[J]. Applied Physics Letters, 2000, 76(20):2859-2861.
[8] LIANG Bang-Li, XIA Guan-Qun, HUANG Zhi-Ming, et al. Determining the band gap of GaxIn1-xAsySb1-y quaternary alloy by infrared ellipsometric spectroscopy[J]. J.Infrared Millim. Waves (梁帮立,夏冠群,黄志明,等.红外椭圆偏振光谱研究GaxIn1-xAsySb1-y材料的禁带宽度.红外与毫米波学报), 2000, 19(3): 188-190.
[9] ADACHI S. Optical properties of In1-xGaxAsyP1-y alloys[J]. Physical Review B, 1989, 39(17):12612-12621.
[10] ANDREWS A M, ROMANOV A E, SPECK J S, et al. Development of cross-hatch morphology during growth of lattice mismatched layers[J]. Applied Physics Letters, 2000, 77(23):3740-3742.
[11] WALLACE S G, ROBINSON B J, MASCHER P, et al. Refractive indices of InGaAsP lattice-matched to GaAs at wavelengths relevant to device design[J]. Applied Physics Letters, 2000, 76(19):2791-2793.
[12] BELENKY G, DONETSKY D, KIPSHIDZE G, et al. Properties of unrelaxed InAs1-xSbx alloys grown on compositionally graded buffers[J]. Applied Physics Letters, 2011, 99(14):141116.
[13] LEIBIGER G, GOTTSCHALCH V, SCHUBERT M. Optical functions, phonon properties, and composition of InGaAsN single layers derived from far-and near-infrared spectroscopic ellipsometry[J]. Journal of Applied Physics, 2001, 90(12):5951-5958.
[14] ZOLLNER S. Model dielectric functions for native oxides on compound semiconductors[J]. Applied Physics Letters, 1993, 63(18):2523-2524.
[15] PASKOV P P. Refractive indices of InSb, InAs, GaSb, InAsxSb1-x, and In1-xGaxSb: Effects of free carriers[J].Journal of Applied Physics, 1997, 81(4):1890-1898.
[16] CHARLES C K, GARLAND J W, RACCAH P M. Modeling the optical dielectric function of the alloy system AlxGa1-xAs[J]. Physical Review B, 1993, 47(4):1876-1888.
[17] ADACHI S, Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2~4μm optoelectronic device applications[J]. Journal of Applied Physics, 1987, 61(10):4869-4876.
[18] WOOLLEY J C, WARNER J. Optical energy-gap variation in InAs-InSb alloys[J]. Canadian Journal of Physics, 1964, 42:1879-1885.
[19] WIEDER H H, CLAWSON A R. photo-electronic properties of InAsSb films[J]. Thin Solid Films, 1973, 15:217-221.
吕英飞, 周炜, 王洋, 俞国林, 胡淑红, 戴宁. 液相外延制备的InAs0.94Sb0.06薄膜的光学性质[J]. 红外与毫米波学报, 2016, 35(1): 42. LV Ying-Fei, ZHOU Wei, WANG Yang, YU Guo-Lin, HU Shu-Hong*, DAI Ning. Investigations on optical properties of LPE-grown InAs0.94Sb0.06 film[J]. Journal of Infrared and Millimeter Waves, 2016, 35(1): 42.
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