半导体光电, 2016, 37 (2): 229, 网络出版: 2016-05-11   

低源流量Delta掺杂p型GaN外延薄膜的研究

Investigation on Low Source Flux Delta Doped p-GaN Flim Grown by MOCVD
作者单位
北京工业大学 电子信息与控制工程学院 光电子技术省部共建教育部重点实验室,北京 100124
引用该论文

王凯, 邢艳辉, 韩军, 赵康康, 郭立建, 于保宁, 李影智. 低源流量Delta掺杂p型GaN外延薄膜的研究[J]. 半导体光电, 2016, 37(2): 229.

WANG Kai, XING Yanhui, HAN Jun, ZHAO Kangkang, GUO Lijian, YU Baoning, LI Yingzhi. Investigation on Low Source Flux Delta Doped p-GaN Flim Grown by MOCVD[J]. Semiconductor Optoelectronics, 2016, 37(2): 229.

参考文献

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王凯, 邢艳辉, 韩军, 赵康康, 郭立建, 于保宁, 李影智. 低源流量Delta掺杂p型GaN外延薄膜的研究[J]. 半导体光电, 2016, 37(2): 229. WANG Kai, XING Yanhui, HAN Jun, ZHAO Kangkang, GUO Lijian, YU Baoning, LI Yingzhi. Investigation on Low Source Flux Delta Doped p-GaN Flim Grown by MOCVD[J]. Semiconductor Optoelectronics, 2016, 37(2): 229.

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