低源流量Delta掺杂p型GaN外延薄膜的研究

王凯; 邢艳辉; 韩军; 赵康康; 郭立建; 于保宁; 李影智

半导体光电, 2016, 37 (2): 229, 网络出版: 2016-05-11

低源流量Delta掺杂p型GaN外延薄膜的研究

Investigation on Low Source Flux Delta Doped p-GaN Flim Grown by MOCVD

论文大纲

王凯邢艳辉 ^*韩军赵康康郭立建于保宁李影智

作者单位

北京工业大学电子信息与控制工程学院光电子技术省部共建教育部重点实验室，北京 100124

薄膜 p型GaN Delta 掺杂低源流量金属有机物化学气相沉积 thin films p-GaN Delta doped low source flux MOCVD

摘要

利用金属有机物化学气相沉积（MOCVD）技术在蓝宝石衬底上制备了GaN∶Mg薄膜。首先，对Delta掺杂p型GaN的掺杂源流量进行优化研究，研究发现在较低46cm3/min的CP2Mg源流量下，晶体质量和导电性能都有所改善，获得了较高空穴浓度，为8.73×1017cm-3，（002）和（102）面FWHM分别为245和316arcsec。随后，采用XRD、Hall测试、PL以及AFM研究了在生长过程中加入生长停顿对Delta掺杂p型GaN材料特性的影响，发现加入生长停顿后，样品电学特性、光学特性和晶体质量并未得到改善，反而下降。

Abstract

GaN∶Mg films were grown on sapphire by metal-organic chemical vapor deposition. First, the CP2Mg source flux of delta doped p-type GaN was studied, it is found that, at lower 46cm3/min CP2Mg source flux, the crystal quality and conductivity performance can be improved, obtaining higher 8.73×1017cm-3 hole concentration. XRD FWHM on (002) and (102) plane are 245 and 316 arcsec,respectively. Then, XRD, Hall test, PL and AFM were used to study the effects on delta doped p-type GaN material characteristic when adding a pre-purge step during the growth process, and it is found that electrical, optical properties and crystal quality can not be improved, but decreased, due to the growth interruption.

参考文献

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王凯, 邢艳辉, 韩军, 赵康康, 郭立建, 于保宁, 李影智. 低源流量Delta掺杂p型GaN外延薄膜的研究[J]. 半导体光电, 2016, 37(2): 229. WANG Kai, XING Yanhui, HAN Jun, ZHAO Kangkang, GUO Lijian, YU Baoning, LI Yingzhi. Investigation on Low Source Flux Delta Doped p-GaN Flim Grown by MOCVD[J]. Semiconductor Optoelectronics, 2016, 37(2): 229.

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