制备工艺对ITO薄膜的光电特性影响研究
[1] LI Shi-na, MA Rui-xin, MA Chun-hong, et al. Effect of thickness on optoelectrical properties of Nbdoped indium tin oxide thin films deposited by RF magnetron sputtering[J]. Optoelectronics Letters, 2013, 9(03): 198-200.
[2] A P Caricato, M Cesaria, A Luches, et al. Electrical and optical properties of ITO and ITO/Cr-doped ITO films[J]. Applied Physics A, 2010, 101 (4): 753-758.
[3] QI Kang, XU Wu, JING Liu, et al. Effect of ultraviolet irradiation on photoelectric properties of indium tin oxide (ITO) thin film deposited by sol-gel method[J]. Advanced Materials Research, 2011, 1168(199): 15-20.
[4] Navid Yasrebi, Behrang Bagheri, Payam Yazdanfar, et al. Optimization of sputtering parameters for the deposition of low resistivity indium tin oxide thin films[J]. Acta Metallurgica Sinica(English Letters), 2014, 27(02): 324-330.
[5] ZHANG Yong-hui, GUO Wei-ling, QIN Yuan, et al. Effects of ITO on proprieties of novel AlGaInP red LED[J]. Acta Optica Sinica, 2010, 30(8): 2402-2405.
[6] Otto J Gregory, Matin Amani, Ian M Tougas, et al. Stability and microstructure of indium tin oxynitride thin films[J]. J. Am. Ceram. Soc., 2012, 95 (2):11-18.
[7] Klaus Ellmer, Rainald Mientus. Carrier transport in polycrystalline ITO and ZnO: Al II: The influence of grain barriers and boundaries[J].Thin Solid Films, 2008, 16 (17):5829-5835.
[8] 陈凯, 雷枫, 伊藤雅英. 白光干涉测量超薄透明电极ITO薄膜的厚度[J]. 中国光学, 2017, 8(4): :567-573.
CHEN Kai, LEI Feng, YI Teng-yaying. Measurement of ITO transparent electrode film thickness with white-lightinterferometer[J]. Chinese Optics, 2017, 8(4):567-573.
[9] PEI Wang, BIN Cao, WEI Wei, et al. Improved light extraction of GaN-based light-emitting diodes by ITO patterning with optimization design[J]. Solid State Electronics, 2009, 54 (3):283-287.
[10] Sarit Dhar,Ayayi Claude Ahyi,John R Williams,et al. Temperature dependence of inversion layer carrier concentration and hall mobility in 4H-SiC MOSFETs[J]. Materials Science Forum,2012,1794(717):35-40.
[11] Tien-Lung Chiu,Ya-Ting Chuang. Spectral observations of hole injection with transition metal oxides for an efficient organic light-emitting diode[J]. Journal of Physics D: Applied Physics,2015,48(7):30-35.
[12] 肖和平,郭冠军,马祥柱,等. 热退火处理对氧化铟锡薄膜光电特性的影响[J]. 激光与光电子学进展,2017,(1):311-316.
XIAO He-ping , GUO Guan-jun, MA Xiang-zhu, et al. Influence of thermal annealing on photoelectrical properties of indium tin oxide thin films [J]. Laser & Optoelectronics Progress, 2017, (1): 311-316.
[13] HE Bo, WANG Hong-Zhi, LI Yao-gang, et al. Fabrication and characterization of amorphous ITO/p-Si heterojunction solar cell[J]. Science China,2013,56(08):1870-1876.
肖和平, 王宇, 郭冠军. 制备工艺对ITO薄膜的光电特性影响研究[J]. 光学与光电技术, 2017, 15(5): 85. XIAO He-ping, WANG Yu, GUO Guan-jun. Optical and Electrical Properties of ITO Films by Process[J]. OPTICS & OPTOELECTRONIC TECHNOLOGY, 2017, 15(5): 85.