In this work, we reported a high-performance-based ultraviolet-visible (UV-VIS) photodetector based on a TiO₂@GaO_xN_y-Ag heterostructure. Ag particles were introduced into TiO₂@GaO_xN_y to enhance the visible light detection performance of the heterojunction device. At 380 nm, the responsivity and detectivity of TiO₂@GaO_xN_y-Ag were 0.94 A/W and 4.79 × 10⁹ Jones, respectively, and they increased to 2.86 A/W and 7.96 × 10¹⁰ Jones at 580 nm. The rise and fall times of the response were 0.19/0.23 and 0.50/0.57 s, respectively. Uniquely, at 580 nm, the responsivity of fabricated devices is one to four orders of magnitude higher than that of the photodetectors based on TiO₂, Ga₂O₃, and other heterojunctions. The excellent optoelectronic characteristics of the TiO₂@GaO_xN_y-Ag heterojunction device could be mainly attributed to the synergistic effect of the type-Ⅱ band structure of the metal–semiconductor–metal heterojunction and the plasmon resonance effect of Ag, which not only effectively promotes the separation of photogenerated carriers but also reduces the recombination rate. It is further illuminated by finite difference time domain method (FDTD) simulation and photoelectric measurements. The TiO₂@GaO_xN_y-Ag arrays with high-efficiency detection are suitable candidates for applications in energy-saving communication, imaging, and sensing networks.

基于原子层沉积技术提出了一种TiO₂∶Al₂O₃纳米复合薄膜作为微通道板导电层材料。根据微通道板的规格参数以及体电阻要求，推导出微通道板导电层薄膜的方块电阻范围为1.73×10¹³~5.20×10¹³ Ω/□；研究了TiO₂循环百分比与TiO₂∶Al₂O₃纳米复合薄膜方块电阻之间的关系，发现当TiO₂循环百分比在30.27%~37.06%时复合薄膜电阻率满足微通道板导电层要求；设计制备了20 nm的Al₂O₃过渡层以及100 nm的TiO₂∶Al₂O₃纳米复合薄膜，测量厚度约为122 nm，且薄膜表面平整光滑，实现了微通道板微孔内壁TiO₂∶Al₂O₃纳米复合薄膜导电层的制备。在1 000 V测试电压下，其体电阻为212.81 MΩ，增益为18 357，表明TiO₂∶Al₂O₃纳米复合薄膜作为微通道板导电层具有可行性。