中国激光, 2014, 41 (11): 1106001, 网络出版: 2014-10-08
MOCVD生长1.06 μm波段InGaAs/GaAs单量子阱材料的发光特性研究
Optical Characteristics of 1.06 μm InGaAs/GaAs Quantum Well Grown by MOCVD
图 & 表
刘洋, 李林, 乔忠良, 苑汇帛, 谷雷, 戴银, 李特, 曲轶. MOCVD生长1.06 μm波段InGaAs/GaAs单量子阱材料的发光特性研究[J]. 中国激光, 2014, 41(11): 1106001. Liu Yang, Li Lin, Qiao Zhongliang, Yuan Huibo, Gu Lei, Dai Yin, Li Te, Qu Yi. Optical Characteristics of 1.06 μm InGaAs/GaAs Quantum Well Grown by MOCVD[J]. Chinese Journal of Lasers, 2014, 41(11): 1106001.